Enhancing the performance of As-Se-S thin films through thermal and electrical property optimization

Abstract

This study aims to perform thermal calculations for As₄₀S₄₅Se₁₅ (ASS) thin films, avoiding the need for bulk material measurements. Sheet resistance was evaluated across various thicknesses (350, 500, 700, 850, and 1000 nm) at a controlled heating rate of 5 K/min in the 350–500 K temperature range. The surface resistance curves reveal two distinct regions, with an inflection point marking the onset of crystallization, suggesting a single amorphous-to-crystalline transformation. Electron microscopy provides additional evidence of this transition, while EDX analysis confirms the film composition aligns with intended ratios. X-ray diffraction (XRD) analysis further characterizes the structural properties, highlighting an exothermic heat transfer process linked to crystallization kinetics. The study also examines electrical properties across extended and hopping states, shedding light on the impact of thickness variations on electrical behavior within the 350–500 K range.