Silicon carbide MOSFETs: A critical review of applications, technological advancements, and future perspectives

Abstract

The emergence of Silicon Carbide (SiC) power MOSFETs represents a revolutionary advancement in power semiconductor technology, fundamentally transforming the landscape of modern power electronics. This comprehensive review systematically analyzes the technological evolution, current state-of-the-art developments, and future trajectories of SiC MOSFET technology, encompassing device physics, structural innovations, manufacturing processes, and application-specific optimizations. Our analysis encompasses a detailed examination of device architectures, progressing from conventional planar structures through advanced trench designs to innovative hybrid configurations, elucidating their respective advantages, limitations, and specific design considerations. The review provides extensive coverage of manufacturing processes, reliability considerations, and optimization strategies that have enabled the achievement of remarkable performance benchmarks, including specific on-resistance values as low as 1.8 mΩ cm² at 1200V ratings. Special attention is devoted to electric vehicle applications, where SiC MOSFETs have demonstrated transformative capabilities through significantly improved system efficiency (>98 %), enhanced switching frequencies (>50 kHz), and superior thermal performance (up to 175 °C). This comprehensive analysis culminates in a detailed assessment of future prospects, examining potential technological trajectories, market dynamics, and emerging application domains. The review serves as a valuable resource for researchers, engineers, and practitioners in power electronics, providing both fundamental understanding and practical insights into the implementation of SiC MOSFET technology across diverse applications.