An ultra-violet and infrared dual-band photodetector using a Ga₂O₃ thin film and HgTe colloidal quantum dots.

IF 4.6 3区材料科学 Q2 CHEMISTRY, MULTIDISCIPLINARY

Nanoscale Advances Pub Date : 2025-02-17 DOI:10.1039/d4na00978a

Qiqi Zheng, Yu Yang, Liansheng Li, Qing-An Xu, Kenan Zhang, Xiaomeng Xue, Lisha Ma, Jianhao Yu, Wanjun Li, Menglu Chen

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Abstract

Dual-band photodetection of ultraviolet (UV) and infrared (IR) light is an advanced technology aimed at simultaneously or selectively detecting signals from these two distinct wavelength bands. This technique offers broad application prospects, particularly in environments requiring multispectral information. In this work, a solar-blind UV photodetector made from an amorphous Ga₂O₃ (a-Ga₂O₃) thin film was combined with a short-wave infrared photodetector made from a HgTe colloidal quantum dot (CQD) film. The photodetector exhibited a high responsivity of up to 1808 A W^-1, detectivity of 3.88 × 10¹⁴ Jones, and an external quantum efficiency of 8.8 × 10⁵% at UV wavelength as well as a responsivity of 0.25 A W^-1, detectivity of 1.45 × 10¹⁰ Jones, and an external quantum efficiency of 15.5% at short-wave infrared wavelength. Furthermore, corona discharge detection using this photodetector was demonstrated.

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紫外线（UV）和红外线（IR）双波段光电探测是一种先进的技术，旨在同时或有选择地探测这两个不同波段的信号。这种技术具有广阔的应用前景，特别是在需要多光谱信息的环境中。在这项研究中，由非晶态氧化镓（a-Ga2O3）薄膜制成的日光盲紫外线光电探测器与由碲镉汞胶体量子点（CQD）薄膜制成的短波红外线光电探测器相结合。该光电探测器在紫外波段具有高达 1808 A W-1 的响应率、3.88 × 1014 Jones 的检测率和 8.8 × 105% 的外部量子效率，在短波红外波段具有 0.25 A W-1 的响应率、1.45 × 1010 Jones 的检测率和 15.5% 的外部量子效率。此外，还演示了使用这种光电探测器进行电晕放电检测。

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