{"title":"Cover Image, Volume 3, Number 1, February","authors":"Xianliang Mai, Qundao Xu, Zhe Yang, Huan Wang, Yongpeng Liu, Yinghua Shen, Hengyi Hu, Meng Xu, Zhongrui Wang, Hao Tong, Chengliang Wang, Xiangshui Miao, Ming Xu","doi":"10.1002/elt2.70001","DOIUrl":null,"url":null,"abstract":"<p>The chalcogenide-based ovonic threshold switching (OTS) device, renowned for its swift and reliable attributes, emerges as an indispensable component in memory chips and neuromorphic computing architectures. Nevertheless, the functional material is prone to glass relaxation, which engenders performance deterioration and threshold switching voltage variability over multiple switching cycles. In this cover image (DOI: 10.1002/elt2.46), the authors proposed a simple binary OTS device to address this issue. A comprehensive exploration via first-principles calculations has unveiled the fundamental mechanisms underpinning the material’s robust performance.\n <figure>\n <div><picture>\n <source></source></picture><p></p>\n </div>\n </figure></p>","PeriodicalId":100403,"journal":{"name":"Electron","volume":"3 1","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2025-03-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/elt2.70001","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Electron","FirstCategoryId":"1085","ListUrlMain":"https://onlinelibrary.wiley.com/doi/10.1002/elt2.70001","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
The chalcogenide-based ovonic threshold switching (OTS) device, renowned for its swift and reliable attributes, emerges as an indispensable component in memory chips and neuromorphic computing architectures. Nevertheless, the functional material is prone to glass relaxation, which engenders performance deterioration and threshold switching voltage variability over multiple switching cycles. In this cover image (DOI: 10.1002/elt2.46), the authors proposed a simple binary OTS device to address this issue. A comprehensive exploration via first-principles calculations has unveiled the fundamental mechanisms underpinning the material’s robust performance.
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