P. Eswara Satyanarayana, Kasaram Roja, N. Giridhar Babu, Bharat Kumar Dhangar, Sk. Akram, G. Bhanu kiran, Thiriveedhi Narendrudu, N. Ch. Ramesh Babu, A. Kalpana
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引用次数: 0
Abstract
The conventional solid-state reaction technique was used to create the lead-free ceramic composition of 0.63Na0.5Bi0.5TiO3–0.37SrTiO3–NaNbO3. A single-phase monoclinic crystal structure with Cc symmetry and a tetragonal P4mm phase has been confirmed using X-ray diffraction studies. Polarization and strain evaluated under an applied electric field have been employed to demonstrate whether these ceramics switched from ferroelectric to antiferroelectric characteristics. Surprisingly, with an electric field of 25 kV/cm, the induced electrocaloric effect (ECE) for the 0.63Na0.5Bi0.5TiO3–0.37SrTiO3–NaNbO3 ceramic exhibited a notable temperature change (ΔT) that was nearly 2.59 K. Furthermore, a high energy density of 3.96 J/cm3 and efficiency of 80.13% were observed throughout a broad range of temperatures and frequencies, from 30 °C to 150 °C and 1 Hz, respectively, using an electric field with an intensity of 150 kV/cm. The ECE response and isothermal entropy change (ΔS) occurring simultaneously suggest that there is a great deal of potential for use in electronic devices.
期刊介绍:
The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.