Morphological and Structural Investigation of Porous Silicon Layers Obtained under Magnetic Field

IF 2.8 3区材料科学 Q3 CHEMISTRY, PHYSICAL

Silicon Pub Date : 2025-02-07 DOI:10.1007/s12633-025-03242-6

Nihal Nasri, Noureddine Boukhenoufa, Salah Rahmouni, Hacene Bendjeffal

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引用次数: 0

Abstract

Due to its good physical and chemical properties, porous silicon (PSi) is a highly favored element for several applications. In this paper, we report an evaluation of the structural and morphological layers of porous silicon of a 111-oriented N-doped silicon substrate created via electrochemical etching under the effect of a magnetic field. The electrochemical technique enabled meticulous regulation of porous silicon characteristics, including average pore diameter range from 0.094 μm to 2.31 μm, average pore depths range between 21.14 μm and 42.87 μm, and porosity from 37.53 μm to 69.74%. The influence of the magnetic field on the morphological structure and optical properties of porous silicon layers was assessed using various analytical approaches, including the Fourier Transform Infrared (FTIR) spectroscopy, scanning Electron Microscopy (SEM), and (PL) spectroscopy. The impact of magnetic fields on the morphology of porous silicon layers is a compelling research subject investigating how magnetic fields can alter the structural properties of porous silicon.

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磁场下获得的多孔硅层的形态和结构研究

由于具有良好的物理和化学特性，多孔硅（PSi）在多种应用中备受青睐。在本文中，我们报告了在磁场作用下通过电化学蚀刻在 111 向掺杂 N 的硅衬底上形成的多孔硅的结构和形态层的评估。电化学技术实现了对多孔硅特性的精细调节，包括平均孔径范围从 0.094 μm 到 2.31 μm，平均孔深范围从 21.14 μm 到 42.87 μm，孔隙率从 37.53 μm 到 69.74%。磁场对多孔硅层的形态结构和光学特性的影响采用了多种分析方法进行评估，包括傅立叶变换红外（FTIR）光谱、扫描电子显微镜（SEM）和（PL）光谱。磁场对多孔硅层形态的影响是研究磁场如何改变多孔硅结构特性的一个引人注目的研究课题。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Silicon CHEMISTRY, PHYSICAL-MATERIALS SCIENCE, MULTIDISCIPLINARY

CiteScore

5.90

自引率

20.60%

发文量

685

审稿时长

>12 weeks

期刊介绍： The journal Silicon is intended to serve all those involved in studying the role of silicon as an enabling element in materials science. There are no restrictions on disciplinary boundaries provided the focus is on silicon-based materials or adds significantly to the understanding of such materials. Accordingly, such contributions are welcome in the areas of inorganic and organic chemistry, physics, biology, engineering, nanoscience, environmental science, electronics and optoelectronics, and modeling and theory. Relevant silicon-based materials include, but are not limited to, semiconductors, polymers, composites, ceramics, glasses, coatings, resins, composites, small molecules, and thin films.