Mahmud Kalanov, Ilkham Sadikov, Shavkat Malikov, Avas Khugaev, Abror Korakhodjaev, Amin Saidov, Shukrillo Usmonov, Dadajan Saparov
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引用次数: 0
Abstract
The X-ray diffraction method confirmed the presence of a three-phase state of oxygen in a growing single crystal of silicon grown by the Czochralski method: a state freely dissolved along the interstices of the matrix lattice in the form of “quasi-molecules”—SiO2 and a precipitate state in the composition of crystalline silicon dioxide—SiO2(c) in the volume of the sample, and on surface of a single crystal in the amorphous form of dioxide – SiO2(a). The radiation-stimulated transformation of oxygen atoms between dissolved and crystalline impurity phase states of oxygen in the bulk of a single crystal has been established. A new physical mechanism for the stability of the intrinsic (diamond-like) crystal structure of a growth silicon single crystal to neutron irradiation is proposed.
期刊介绍：
The journal Silicon is intended to serve all those involved in studying the role of silicon as an enabling element in materials science. There are no restrictions on disciplinary boundaries provided the focus is on silicon-based materials or adds significantly to the understanding of such materials. Accordingly, such contributions are welcome in the areas of inorganic and organic chemistry, physics, biology, engineering, nanoscience, environmental science, electronics and optoelectronics, and modeling and theory. Relevant silicon-based materials include, but are not limited to, semiconductors, polymers, composites, ceramics, glasses, coatings, resins, composites, small molecules, and thin films.
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