Study of Zinc Implanted Silicon Nitride Film

Abstract

The results of studying nanoclusters at the interface of a Si₃N₄ film on a Si substrate implanted with ⁶⁴Zn⁺ ions with a dose of 5 × 10¹⁶/cm² and an energy of 40 keV are presented. The Si₃N₄ film was deposited on a silicon substrate using a gas-phase method. Then the implanted samples were annealed in air in steps of 100°C for 1 h at each step in the temperature range of 400–700°C. The surface morphology of the samples was studied using scanning probe microscopy. The profiles of the implanted impurity and film elements, as well as the chemical state of the Zn ion, were studied using X-ray photoelectron and Auger electron spectroscopy. The shock pulse method revealed that after implantation individual metallic zinc nanoclusters with a size of about 100 nm or less are present near the surface of the Si₃N₄ film. During the annealing process, they grow and simultaneously transform into the ZnSiN₂ phase and, possibly, into the phases of zinc oxide and silicide near the surface. After annealing at a temperature of 700°C, Zn-containing nanoclusters with a size of about 100 nm are formed in the Si₃N₄ film.