Yuji Ando, Hidemasa Takahashi, Ryutaro Makisako, Akio Wakejima, Jun Suda
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引用次数: 0
Abstract
This article examines the use of a high Al mole fraction (x = 0.34) and a thin barrier layer (t = 11.5 nm) in AlGaN/GaN high electron mobility transistors (HEMTs) with both single-gate and dual-gate configurations. Single-gate HEMTs with the current epitaxial structure demonstrated an improved maximum drain current and transconductance, as well as reduced current collapse, compared to similar devices with the reference structure (x = 0.22 and t = 17.5 nm). Furthermore, a dual-gate HEMT with the current epitaxial structure and a gate length of 80 nm showed an extrapolated unity current gain cut-off frequency of 74 GHz and an extrapolated maximum oscillation frequency of 248 GHz, whereas a similar device using the reference structure exhibited values of 63 and 231 GHz, respectively.
期刊介绍：
Electronics Letters is an internationally renowned peer-reviewed rapid-communication journal that publishes short original research papers every two weeks. Its broad and interdisciplinary scope covers the latest developments in all electronic engineering related fields including communication, biomedical, optical and device technologies. Electronics Letters also provides further insight into some of the latest developments through special features and interviews.
Scope
As a journal at the forefront of its field, Electronics Letters publishes papers covering all themes of electronic and electrical engineering. The major themes of the journal are listed below.
Antennas and Propagation
Biomedical and Bioinspired Technologies, Signal Processing and Applications
Control Engineering
Electromagnetism: Theory, Materials and Devices
Electronic Circuits and Systems
Image, Video and Vision Processing and Applications
Information, Computing and Communications
Instrumentation and Measurement
Microwave Technology
Optical Communications
Photonics and Opto-Electronics
Power Electronics, Energy and Sustainability
Radar, Sonar and Navigation
Semiconductor Technology
Signal Processing
MIMO
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