N. M. Mustafoeva, A. K. Tashatov, B. E. Umirzakov, M. B. Mamatova
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引用次数: 0
Abstract
The composition, band gap, morphology, crystal structure, and electrophysical properties of the surface layers of the Si/NiSi2/Si(111) film system obtained by solid-phase epitaxy at different substrate temperatures are studied using Auger-electron spectroscopy, measuring the intensity of light transmitted through the sample and the specific resistance of the surface, scanning electron microscopy, and high-energy electron diffraction. It is established that the interface between the Si/NiSi2 and NiSi2/Si(111) layers is abrupt, and the thickness of the transition layers does not exceed 4–5 nm. It is shown that it is impossible to obtain a Si/NiSi2/Si(111) three-layer system with a thickness of Si and NiSi2 of less than 20–30 nm using solid-phase epitaxy.
期刊介绍：
Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques publishes original articles on the topical problems of solid-state physics, materials science, experimental techniques, condensed media, nanostructures, surfaces of thin films, and phase boundaries: geometric and energetical structures of surfaces, the methods of computer simulations; physical and chemical properties and their changes upon radiation and other treatments; the methods of studies of films and surface layers of crystals (XRD, XPS, synchrotron radiation, neutron and electron diffraction, electron microscopic, scanning tunneling microscopic, atomic force microscopic studies, and other methods that provide data on the surfaces and thin films). Articles related to the methods and technics of structure studies are the focus of the journal. The journal accepts manuscripts of regular articles and reviews in English or Russian language from authors of all countries. All manuscripts are peer-reviewed.
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