3D numerical investigation of the factors affecting the thermal stresses and the wavy external shape of Li2MoO4 crystals grown by the Czochralski method
{"title":"3D numerical investigation of the factors affecting the thermal stresses and the wavy external shape of Li2MoO4 crystals grown by the Czochralski method","authors":"C. Stelian, M. Velazquez","doi":"10.1016/j.jcrysgro.2025.128134","DOIUrl":null,"url":null,"abstract":"<div><div>Three-dimensional (3D) modeling was applied to investigate heat transfer, convection and thermal stresses in Czochralski growth of Li<sub>2</sub>MoO<sub>4</sub> (LMO) crystals used to build the core of heat-scintillation cryogenic bolometers (HSCBs). Several crystals of <span><math><mrow><mn>4</mn><mspace></mspace><mi>c</mi><mi>m</mi></mrow></math></span> and <span><math><mrow><mn>5</mn><mspace></mspace><mi>c</mi><mi>m</mi></mrow></math></span> in diameter were grown in two different Czochralski configurations. The largest ingot (<span><math><mrow><mn>4</mn><mspace></mspace><mi>c</mi><mi>m</mi></mrow></math></span>-diameter and <span><math><mrow><mn>6</mn><mspace></mspace><mi>c</mi><mi>m</mi></mrow></math></span>-length) grown in a furnace based on coupling the inductive coil and a platinum crucible, has cracked as the bottom part of the crystal was cut. Another crystal (<span><math><mrow><mn>5</mn><mspace></mspace><mi>c</mi><mi>m</mi></mrow></math></span>-diameter and <span><math><mrow><mn>15</mn><mspace></mspace><mi>c</mi><mi>m</mi></mrow></math></span>-length) was grown in a furnace based on inductive heating of a susceptor, which was previously optimized by numerical modeling in order to reduce the thermal stresses in LMO crystals. The external surface of this ingot shows a slightly wavy shape. This irregular shape was investigated by considering 3D convective effects at the free surface of the melt, which can affect the liquid meniscus shape, and generate slight instabilities of the growth process. It is concluded that this wavy shape can be avoided by changing the sensitivity of the automatic crystal shape control. The thermal stress computations, conducted for the ingot of <span><math><mrow><mn>4</mn><mspace></mspace><mi>c</mi><mi>m</mi></mrow></math></span> in diameter, show that the normal stress in the longitudinal section has a maximum which highly exceeds the critical value of the tensile stress in a region located at the bottom part of the ingot. That explains the fracture observed during the cutting of the ingot’s tail. The computations performed in the case of <span><math><mrow><mn>5</mn><mspace></mspace><mi>c</mi><mi>m</mi></mrow></math></span>-diameter ingot, grown in an optimized configuration, show that the crystal exhibits low thermal stress, except for a thin region of <span><math><mrow><mn>2</mn><mspace></mspace><mi>m</mi><mi>m</mi></mrow></math></span> located at the ingot periphery, where the stress slightly exceeds the critical value. Thermal stresses can be reduced by a factor of 2 by growing the ingots parallel to the c-axis.</div></div>","PeriodicalId":353,"journal":{"name":"Journal of Crystal Growth","volume":"658 ","pages":"Article 128134"},"PeriodicalIF":1.7000,"publicationDate":"2025-02-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Crystal Growth","FirstCategoryId":"88","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S002202482500082X","RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"CRYSTALLOGRAPHY","Score":null,"Total":0}
引用次数: 0
Abstract
Three-dimensional (3D) modeling was applied to investigate heat transfer, convection and thermal stresses in Czochralski growth of Li2MoO4 (LMO) crystals used to build the core of heat-scintillation cryogenic bolometers (HSCBs). Several crystals of and in diameter were grown in two different Czochralski configurations. The largest ingot (-diameter and -length) grown in a furnace based on coupling the inductive coil and a platinum crucible, has cracked as the bottom part of the crystal was cut. Another crystal (-diameter and -length) was grown in a furnace based on inductive heating of a susceptor, which was previously optimized by numerical modeling in order to reduce the thermal stresses in LMO crystals. The external surface of this ingot shows a slightly wavy shape. This irregular shape was investigated by considering 3D convective effects at the free surface of the melt, which can affect the liquid meniscus shape, and generate slight instabilities of the growth process. It is concluded that this wavy shape can be avoided by changing the sensitivity of the automatic crystal shape control. The thermal stress computations, conducted for the ingot of in diameter, show that the normal stress in the longitudinal section has a maximum which highly exceeds the critical value of the tensile stress in a region located at the bottom part of the ingot. That explains the fracture observed during the cutting of the ingot’s tail. The computations performed in the case of -diameter ingot, grown in an optimized configuration, show that the crystal exhibits low thermal stress, except for a thin region of located at the ingot periphery, where the stress slightly exceeds the critical value. Thermal stresses can be reduced by a factor of 2 by growing the ingots parallel to the c-axis.
期刊介绍:
The journal offers a common reference and publication source for workers engaged in research on the experimental and theoretical aspects of crystal growth and its applications, e.g. in devices. Experimental and theoretical contributions are published in the following fields: theory of nucleation and growth, molecular kinetics and transport phenomena, crystallization in viscous media such as polymers and glasses; crystal growth of metals, minerals, semiconductors, superconductors, magnetics, inorganic, organic and biological substances in bulk or as thin films; molecular beam epitaxy, chemical vapor deposition, growth of III-V and II-VI and other semiconductors; characterization of single crystals by physical and chemical methods; apparatus, instrumentation and techniques for crystal growth, and purification methods; multilayer heterostructures and their characterisation with an emphasis on crystal growth and epitaxial aspects of electronic materials. A special feature of the journal is the periodic inclusion of proceedings of symposia and conferences on relevant aspects of crystal growth.