Low-temperature formation of pure SiC-modified layer on diamond surface by reaction with Mg2Si

IF 4.3 3区材料科学 Q2 MATERIALS SCIENCE, COATINGS & FILMS

Diamond and Related Materials Pub Date : 2025-02-27 DOI:10.1016/j.diamond.2025.112159

Junguo Li , Feng Jiang , Chenhan Zhao , Shuaijie Huan , Fei Tang , Qianqian Xiang , Meijuan Li , Jian Zhang , Qiang Shen

{"title":"Low-temperature formation of pure SiC-modified layer on diamond surface by reaction with Mg2Si","authors":"Junguo Li , Feng Jiang , Chenhan Zhao , Shuaijie Huan , Fei Tang , Qianqian Xiang , Meijuan Li , Jian Zhang , Qiang Shen","doi":"10.1016/j.diamond.2025.112159","DOIUrl":null,"url":null,"abstract":"<div><div>Diamond/Cu composites commonly require formation of a carbide-modified layer to improve interfacial adhesion. SiC, when applied as a modification layer, has the advantage of high thermal conductivity and a matched coefficient of thermal expansion. However, the high temperatures for the formation of SiC can lead to graphitization of diamond. In this work, a SiC-modified layer successfully forms at low temperatures on the diamond surface through a molten-salt method with Mg<sub>2</sub>Si as the silicon source. The effects of temperature and time on SiC-formation and diamond-graphitization are investigated. The results show that a pure SiC-modified layer can be formed on the diamond surface at 1000 °C without leading to graphitization of diamond. The SiC-modified diamond/Cu composite shows an improved thermal conductivity of 469.1 W·m<sup>−1</sup>·K<sup>−1</sup>, even with a relative density of only 96.2 %.</div></div>","PeriodicalId":11266,"journal":{"name":"Diamond and Related Materials","volume":"154 ","pages":"Article 112159"},"PeriodicalIF":4.3000,"publicationDate":"2025-02-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Diamond and Related Materials","FirstCategoryId":"88","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S092596352500216X","RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"MATERIALS SCIENCE, COATINGS & FILMS","Score":null,"Total":0}

引用次数: 0

Abstract

Diamond/Cu composites commonly require formation of a carbide-modified layer to improve interfacial adhesion. SiC, when applied as a modification layer, has the advantage of high thermal conductivity and a matched coefficient of thermal expansion. However, the high temperatures for the formation of SiC can lead to graphitization of diamond. In this work, a SiC-modified layer successfully forms at low temperatures on the diamond surface through a molten-salt method with Mg₂Si as the silicon source. The effects of temperature and time on SiC-formation and diamond-graphitization are investigated. The results show that a pure SiC-modified layer can be formed on the diamond surface at 1000 °C without leading to graphitization of diamond. The SiC-modified diamond/Cu composite shows an improved thermal conductivity of 469.1 W·m⁻¹·K⁻¹, even with a relative density of only 96.2 %.

Abstract Image

查看原文本刊更多论文

求助全文

约1分钟内获得全文求助全文

来源期刊

Diamond and Related Materials 工程技术-材料科学：综合

CiteScore

6.00

自引率

14.60%

发文量

702

审稿时长

2.1 months

期刊介绍： DRM is a leading international journal that publishes new fundamental and applied research on all forms of diamond, the integration of diamond with other advanced materials and development of technologies exploiting diamond. The synthesis, characterization and processing of single crystal diamond, polycrystalline films, nanodiamond powders and heterostructures with other advanced materials are encouraged topics for technical and review articles. In addition to diamond, the journal publishes manuscripts on the synthesis, characterization and application of other related materials including diamond-like carbons, carbon nanotubes, graphene, and boron and carbon nitrides. Articles are sought on the chemical functionalization of diamond and related materials as well as their use in electrochemistry, energy storage and conversion, chemical and biological sensing, imaging, thermal management, photonic and quantum applications, electron emission and electronic devices. The International Conference on Diamond and Carbon Materials has evolved into the largest and most well attended forum in the field of diamond, providing a forum to showcase the latest results in the science and technology of diamond and other carbon materials such as carbon nanotubes, graphene, and diamond-like carbon. Run annually in association with Diamond and Related Materials the conference provides junior and established researchers the opportunity to exchange the latest results ranging from fundamental physical and chemical concepts to applied research focusing on the next generation carbon-based devices.