Room Temperature InGaAs/AlGaAsSb Single Photon Avalanche Diode

IF 2.1 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Photonics Journal Pub Date : 2025-02-13 DOI:10.1109/JPHOT.2025.3541323

J. Taylor-Mew;L. Li;T. Blain;C. H. Tan;J. S. Ng

{"title":"Room Temperature InGaAs/AlGaAsSb Single Photon Avalanche Diode","authors":"J. Taylor-Mew;L. Li;T. Blain;C. H. Tan;J. S. Ng","doi":"10.1109/JPHOT.2025.3541323","DOIUrl":null,"url":null,"abstract":"Near-infrared Single Photon Avalanche Diodes (SPADs) are the dominant, practical single photon detectors for quantum applications and low-level optical sensing. Although some infrared SPADs can operate at room temperature, thermoelectric coolers are still essential, increasing complexity (operation and device packaging) and power consumption. Passively-cooled SPADs could be realized by avalanche materials exhibiting better temperature stability. A promising candidate is the InGaAs/AlGaAsSb SPAD, because the AlGaAsSb multiplier is highly stable with temperature. In this work, we report single photon detection performance of InGaAs/AlGaAsSb SPADs at room temperature and 1550 nm wavelength using multiple devices for each type of measurements. With 0.1 photons per pulse and 15 μm diameter devices, the maximum SPDE was 14% at DCR of 30 Mc.s<sup>−1</sup>, respectively. The best NEP value is around an order of magnitude higher than InGaAs/InP SPADs, but are comparable to InGaAs/InAlAs SPADs. Within the relevant overbias range and repetition rate up to 1 MHz, the DCR was unaffected by afterpulsing. Timing jitters were as low as 150 ps, matching InGaAs/InP SPADs. The results of this work are much more competitive than the previous report of InGaAs/AlGaAsSb SPAD, which required cooling to 200 K to detect single photons. Further research could help InGaAs/AlGaAsSb SPADs progressing towards passively-cooled single photon detectors for room temperature operation.","PeriodicalId":13204,"journal":{"name":"IEEE Photonics Journal","volume":"17 2","pages":"1-6"},"PeriodicalIF":2.1000,"publicationDate":"2025-02-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10884001","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Photonics Journal","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10884001/","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}

引用次数: 0

Abstract

Near-infrared Single Photon Avalanche Diodes (SPADs) are the dominant, practical single photon detectors for quantum applications and low-level optical sensing. Although some infrared SPADs can operate at room temperature, thermoelectric coolers are still essential, increasing complexity (operation and device packaging) and power consumption. Passively-cooled SPADs could be realized by avalanche materials exhibiting better temperature stability. A promising candidate is the InGaAs/AlGaAsSb SPAD, because the AlGaAsSb multiplier is highly stable with temperature. In this work, we report single photon detection performance of InGaAs/AlGaAsSb SPADs at room temperature and 1550 nm wavelength using multiple devices for each type of measurements. With 0.1 photons per pulse and 15 μm diameter devices, the maximum SPDE was 14% at DCR of 30 Mc.s⁻¹, respectively. The best NEP value is around an order of magnitude higher than InGaAs/InP SPADs, but are comparable to InGaAs/InAlAs SPADs. Within the relevant overbias range and repetition rate up to 1 MHz, the DCR was unaffected by afterpulsing. Timing jitters were as low as 150 ps, matching InGaAs/InP SPADs. The results of this work are much more competitive than the previous report of InGaAs/AlGaAsSb SPAD, which required cooling to 200 K to detect single photons. Further research could help InGaAs/AlGaAsSb SPADs progressing towards passively-cooled single photon detectors for room temperature operation.

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来源期刊

IEEE Photonics Journal ENGINEERING, ELECTRICAL & ELECTRONIC-OPTICS

CiteScore

4.50

自引率

8.30%

发文量

489

审稿时长

1.4 months

期刊介绍： Breakthroughs in the generation of light and in its control and utilization have given rise to the field of Photonics, a rapidly expanding area of science and technology with major technological and economic impact. Photonics integrates quantum electronics and optics to accelerate progress in the generation of novel photon sources and in their utilization in emerging applications at the micro and nano scales spanning from the far-infrared/THz to the x-ray region of the electromagnetic spectrum. IEEE Photonics Journal is an online-only journal dedicated to the rapid disclosure of top-quality peer-reviewed research at the forefront of all areas of photonics. Contributions addressing issues ranging from fundamental understanding to emerging technologies and applications are within the scope of the Journal. The Journal includes topics in: Photon sources from far infrared to X-rays, Photonics materials and engineered photonic structures, Integrated optics and optoelectronic, Ultrafast, attosecond, high field and short wavelength photonics, Biophotonics, including DNA photonics, Nanophotonics, Magnetophotonics, Fundamentals of light propagation and interaction; nonlinear effects, Optical data storage, Fiber optics and optical communications devices, systems, and technologies, Micro Opto Electro Mechanical Systems (MOEMS), Microwave photonics, Optical Sensors.