Impact of distributed Bragg reflectors on the intrinsic detection efficiency of superconducting nanowire single-photon detectors

IF 5.6 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC
Hongxin Xu , Hailong Han , You Xiao , Jiamin Xiong , Chaomeng Ding , Zhiyun Shu , Yuchi Li , Xiaoyu Liu , Lixing You , Zhen Wang , Hao Li
{"title":"Impact of distributed Bragg reflectors on the intrinsic detection efficiency of superconducting nanowire single-photon detectors","authors":"Hongxin Xu ,&nbsp;Hailong Han ,&nbsp;You Xiao ,&nbsp;Jiamin Xiong ,&nbsp;Chaomeng Ding ,&nbsp;Zhiyun Shu ,&nbsp;Yuchi Li ,&nbsp;Xiaoyu Liu ,&nbsp;Lixing You ,&nbsp;Zhen Wang ,&nbsp;Hao Li","doi":"10.1016/j.supcon.2025.100152","DOIUrl":null,"url":null,"abstract":"<div><div>In this study, we investigate the impact of substrates with distributed Bragg reflectors (DBRs) on the proximity effect during the fabrication of superconducting nanowire single-photon detectors (SNSPDs) using electron beam lithography. We compare the linewidth compression and line edge roughness of nanowires prepared on three different DBRs substrates. Additionally, we characterize the variations in switching current (I<span><math><msub><mrow></mrow><mrow><mi>s</mi><mi>w</mi></mrow></msub></math></span>) and intrinsic detection efficiency (IDE) at a 2.2-K temperature. The results show that when the substrates are composed of low atomic number materials, such as Si and SiO<sub>2</sub>, the proximity effect is significantly mitigated. As a consequence, the lithography quality of nanowires is effectively improved, thus enhancing the IDE of SNSPDs. This study is expected to provide new insights into the fabrication of SNSPDs and lay the foundation for the preparation of high-performance and high-uniformity large-area devices.</div></div>","PeriodicalId":101185,"journal":{"name":"Superconductivity","volume":"13 ","pages":"Article 100152"},"PeriodicalIF":5.6000,"publicationDate":"2025-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Superconductivity","FirstCategoryId":"1085","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S2772830725000031","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
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Abstract

In this study, we investigate the impact of substrates with distributed Bragg reflectors (DBRs) on the proximity effect during the fabrication of superconducting nanowire single-photon detectors (SNSPDs) using electron beam lithography. We compare the linewidth compression and line edge roughness of nanowires prepared on three different DBRs substrates. Additionally, we characterize the variations in switching current (Isw) and intrinsic detection efficiency (IDE) at a 2.2-K temperature. The results show that when the substrates are composed of low atomic number materials, such as Si and SiO2, the proximity effect is significantly mitigated. As a consequence, the lithography quality of nanowires is effectively improved, thus enhancing the IDE of SNSPDs. This study is expected to provide new insights into the fabrication of SNSPDs and lay the foundation for the preparation of high-performance and high-uniformity large-area devices.
分布布拉格反射器对超导纳米线单光子探测器本征探测效率的影响
在这项研究中,我们研究了分布布拉格反射器(DBRs)衬底在电子束光刻制造超导纳米线单光子探测器(SNSPDs)过程中对接近效应的影响。我们比较了在三种不同的dbr衬底上制备的纳米线的线宽压缩和线边缘粗糙度。此外,我们还表征了2.2 k温度下开关电流(Isw)和本征检测效率(IDE)的变化。结果表明,当衬底由低原子序数材料(如Si和SiO2)组成时,邻近效应明显减弱。因此,有效地提高了纳米线的光刻质量,从而提高了snspd的IDE。该研究有望为snspd的制备提供新的见解,并为制备高性能、高均匀性的大面积器件奠定基础。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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CiteScore
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