Impact of partial substitution of Sn by Cu on the mechanical, electrical, and magnetic properties of Ni44Mn44Sn12 Heusler alloys

IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Adelaide C. Mélo, Clarice Cardoso Soares, Marcio Assolin Correa, Ariely V. B. Lima, Natalia L. C. Fernandes, Felipe Bohn, Wictor M. P. A. de Lima, Bruno Alessandro Guedes de Lima, Tibério Andrade dos Passos, Ramon Alves Torquato, Danniel Ferreira de Oliveira
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引用次数: 0

Abstract

Impact of partial substitution of Sn by Cu on the mechanical, electrical, and magnetic properties of Ni44Mn44Sn12 Heusler alloys was analyzed in this study. The alloys Ni44Mn44Sn12, Ni44Mn44Sn10.5Cu1.5, and Ni44Mn44Sn9Cu3 were produced through casting without atmosphere control and characterized using microscopy scanning electron microscopy, X-ray diffraction, Vickers microhardness tests, electrical resistivity measurements, and vibrating sample magnetometry. The results showed that the partial substitution of Sn with Cu did not affect the solidification microstructure or the phases present at room temperature. However, this substitution increased the transition temperatures from austenite to martensite and from martensite to austenite, increasing the proportion of the martensitic phase from 56.04 to 77.67%. This resulted in a decrease in Vickers microhardness (from 468.3 to 352.3 HV), electrical resistivity (from 1.3 to 1.16 mΩ∙mm), and saturation magnetization (from 23.67 to 9.6 emu/g). In contrast, both coercivity and remanent magnetization rose, with values changing from 5.37 to 21.64 Oe and from 0.16 to 0.31 emu/g, respectively. Thus, our findings present a new approach for doping the NiMnSn alloy, aimed at modifying its structural and electrical properties, which are important factors for technological applications.

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来源期刊
Journal of Materials Science: Materials in Electronics
Journal of Materials Science: Materials in Electronics 工程技术-材料科学:综合
CiteScore
5.00
自引率
7.10%
发文量
1931
审稿时长
2 months
期刊介绍: The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
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