Ayushi Sharma, Manpreet Singh, Kamal Kishore, Dinesh Pathak, Khalid Mujasam Batoo, Taimun Qaisar, Ahmed Ahmed Ibrahim, Deepak Kumar, Kais Iben Nassar, Madan Lal
{"title":"Influence of low sintering temperature on the structural, morphological, and dielectric properties of (Bi0.4Ba0.1)Na0.5TiO3 ceramics","authors":"Ayushi Sharma, Manpreet Singh, Kamal Kishore, Dinesh Pathak, Khalid Mujasam Batoo, Taimun Qaisar, Ahmed Ahmed Ibrahim, Deepak Kumar, Kais Iben Nassar, Madan Lal","doi":"10.1007/s10854-025-14459-x","DOIUrl":null,"url":null,"abstract":"<div><p>This paper presents the preparation of ceramics with (Bi<sub>0.4</sub>Ba<sub>0.1</sub>)Na<sub>0.5</sub>TiO<sub>3</sub> via a conventional solid-state reaction method and their sintering at low temperatures of 850, 900, and 950 °C for 3 h, respectively. Bi<sub>2</sub>O<sub>3</sub> and Na<sub>2</sub>O<sub>3</sub> were used to suppress the volatility of Bi and Na ions during the sintering of (Bi<sub>0.4</sub>Ba<sub>0.1</sub>)Na<sub>0.5</sub>TiO<sub>3</sub> ceramics. X-ray diffraction (XRD), Scanning electron microscope (SEM), and an LCR meter were used to analyze these ceramics' structural, morphological, and dielectric properties. Rhombohedral crystal lattice (with space group R3c) is confirmed by Rietveld’s refinement of the XRD pattern. W–H plots show an increase in crystallite strain from 0.77 × 10<sup>–3</sup> to 1.5 × 10<sup>–3</sup> due to a decrease in average crystallite size from 133.32 to 119.52 nm. With an increase in sintering temperature, the grain size increased from 0.55 to 2.30 μm on average based on SEM images. Dielectric spectra revealed that the magnitude of the dielectric constant (<i>ε</i>) decreases with frequency increase and is explained by Maxwell–Wagner’s Model. The ferroelectric phase transition temperature is shifted to a higher temperature, which makes the material feasible for energy storage applications.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 6","pages":""},"PeriodicalIF":2.8000,"publicationDate":"2025-02-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Materials Science: Materials in Electronics","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s10854-025-14459-x","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
This paper presents the preparation of ceramics with (Bi0.4Ba0.1)Na0.5TiO3 via a conventional solid-state reaction method and their sintering at low temperatures of 850, 900, and 950 °C for 3 h, respectively. Bi2O3 and Na2O3 were used to suppress the volatility of Bi and Na ions during the sintering of (Bi0.4Ba0.1)Na0.5TiO3 ceramics. X-ray diffraction (XRD), Scanning electron microscope (SEM), and an LCR meter were used to analyze these ceramics' structural, morphological, and dielectric properties. Rhombohedral crystal lattice (with space group R3c) is confirmed by Rietveld’s refinement of the XRD pattern. W–H plots show an increase in crystallite strain from 0.77 × 10–3 to 1.5 × 10–3 due to a decrease in average crystallite size from 133.32 to 119.52 nm. With an increase in sintering temperature, the grain size increased from 0.55 to 2.30 μm on average based on SEM images. Dielectric spectra revealed that the magnitude of the dielectric constant (ε) decreases with frequency increase and is explained by Maxwell–Wagner’s Model. The ferroelectric phase transition temperature is shifted to a higher temperature, which makes the material feasible for energy storage applications.
期刊介绍:
The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.