Boosting the morphological, structural, optical, and dielectric characteristics of MgO-SiC nanomaterials merged with organic polymer for high-performance energy storage devices

IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Majeed Ali Habeeb, Idrees Oreibi, Rehab Shather Abdul Hamza
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引用次数: 0

Abstract

The objective of the current investigation is to create polymer nanocomposites (PNCs) by combining magnesium oxide (MgO)/ silicon carbide (SiC) nanomaterials (NMs) and Poly(methyl methacrylate) (PMMA) for use in a diverse range of electrical and optical nanodevices. The films of PMMA/MgO-SiC PNCs were produced using the casting process. The structural properties of PMMA/MgO-SiC polymer nanocomposites (PNCs) were investigated using optical microscopy (OM) and Fourier-transform infrared spectroscopy (FTIR). In addition, the optical properties of PMMA/MgO-SiC PNCs were also examined. The Optical Microscope (OM) has shown that there is a uniform dispersion of MgO-SiC Nanomaterials (NMs) within the polymer structure of PMMA. Also, the Fourier Transform Infrared Spectroscopy (FTIR) analysis confirms the presence of a physical contact with the PMMA polymer and the MgO-SiC NMs. The spectral properties were evaluated throughout a spectrum of wavelengths spanning around (200–780) nm. The outcomes indicated that the absorption value of PMMA rose by 1200% and 1800% at wavelengths (380 nm) (UV/spectra) and 560 nm (VIS/spectra), respectively, when the ratio of MgO-SiC NMs was 5 wt.%. The optical transmission of PMMA fell by 113% and 118% at wavelengths of 380 nm and 560 nm, respectively. These findings suggest that PMMA/MgO-SiC PNCs films have potential uses in tiny electronic devices and optics. The analysis revealed the existence of two distinct types of optical band gaps: an indirect forbidden energy gap and an indirect allowed energy gap. The indirect forbidden energy gap decreased from 4.63 to 2.95 eV, while the indirect allowed energy gap decreased from 5.12 to 3.96 eV, as the total amount of MgO-SiC NMs increased to 5 wt.%. This distinction between the two band gap types emphasizes the tunability of the PMMA/MgO-SiC PNCs for specific optical applications. The optical properties of PMMA were enhanced when the concentration of MgO-SiC NMs increased. The analysis of dielectric properties revealed that the dielectric constant and loss of PMMA/MgO-SiC PNCs decreased as the frequency increased, but increased as the ratio of MgO-SiC NMs was enhanced. The electrical conductivity of PMMA/MgO-SiC (PNCs) increases as the frequency and ratio of MgO-SiC nanoparticles (NMs) increase. The PMMA/MgO-SiC (PNCs) were investigated for their potential use in pressure sensors. The results indicated that when the pressure rose, the dielectric properties of the PMMA/MgO-SiC PNCs also increased. In conclusion, the results regarding the structural, morphological, and dielectric characteristics have provided confirmation that the PMMA/MgO-SiC PNCs might potentially be advantageous in many applications such as sensors of pressure.

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来源期刊
Journal of Materials Science: Materials in Electronics
Journal of Materials Science: Materials in Electronics 工程技术-材料科学:综合
CiteScore
5.00
自引率
7.10%
发文量
1931
审稿时长
2 months
期刊介绍: The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
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