Linear magnetoresistance, weak antilocalization and electron-hole coexistence in gate tunable topological insulator (BixSb1−x)2Te3 nanoplates

IF 11.2 1区材料科学 Q1 MATERIALS SCIENCE, MULTIDISCIPLINARY

Journal of Materials Science & Technology Pub Date : 2025-02-26 DOI:10.1016/j.jmst.2024.12.064

Tingting Li, Xudong Shi, Mingze Li, Xuan P.A. Gao, Zhenhua Wang, Zhidong Zhang

{"title":"Linear magnetoresistance, weak antilocalization and electron-hole coexistence in gate tunable topological insulator (BixSb1−x)2Te3 nanoplates","authors":"Tingting Li, Xudong Shi, Mingze Li, Xuan P.A. Gao, Zhenhua Wang, Zhidong Zhang","doi":"10.1016/j.jmst.2024.12.064","DOIUrl":null,"url":null,"abstract":"We report a systematic study on the transport properties of (Bi0.2Sb0.8)2Te3 and (Bi0.4Sb0.6)2Te3 nanoplates with a thickness of about 6 nm grown by chemical vapor deposition (CVD) on Si/SiO2 substrate. We achieve a significant ambipolar field effect in the two samples with different compositions by applying back-gate voltage, successfully tuning the Fermi level across the Dirac point of surface states. It is found that the Hall resistance exhibits strong non-linear behavior and magnetic field induced sign change of the slope when the Fermi level is near the Dirac point, indicating the coexistence of n-type and p-type carriers. Moreover, this coincides with the striking crossover from weak antilocalization (WAL) to linear magnetoresistance (LMR). These gate and temperature dependent magneto-transport studies provide a deeper insight into the nature of LMR and WAL in topological materials.","PeriodicalId":16154,"journal":{"name":"Journal of Materials Science & Technology","volume":"36 1","pages":""},"PeriodicalIF":11.2000,"publicationDate":"2025-02-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Materials Science & Technology","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.1016/j.jmst.2024.12.064","RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}

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Abstract

We report a systematic study on the transport properties of (Bi_0.2Sb_0.8)₂Te₃ and (Bi_0.4Sb_0.6)₂Te₃ nanoplates with a thickness of about 6 nm grown by chemical vapor deposition (CVD) on Si/SiO₂ substrate. We achieve a significant ambipolar field effect in the two samples with different compositions by applying back-gate voltage, successfully tuning the Fermi level across the Dirac point of surface states. It is found that the Hall resistance exhibits strong non-linear behavior and magnetic field induced sign change of the slope when the Fermi level is near the Dirac point, indicating the coexistence of n-type and p-type carriers. Moreover, this coincides with the striking crossover from weak antilocalization (WAL) to linear magnetoresistance (LMR). These gate and temperature dependent magneto-transport studies provide a deeper insight into the nature of LMR and WAL in topological materials.

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来源期刊

Journal of Materials Science & Technology 工程技术-材料科学：综合

CiteScore

20.00

自引率

11.00%

发文量

995

审稿时长

13 days

期刊介绍： Journal of Materials Science & Technology strives to promote global collaboration in the field of materials science and technology. It primarily publishes original research papers, invited review articles, letters, research notes, and summaries of scientific achievements. The journal covers a wide range of materials science and technology topics, including metallic materials, inorganic nonmetallic materials, and composite materials.