Analysis of total ionizing dose effect and degradation mechanism of a-IGZO TFT

IF 2.8 4区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Journal of Materials Science: Materials in Electronics Pub Date : 2025-02-26 DOI:10.1007/s10854-025-14458-y

Jian-Jian Wang, Gang-Ping Yan, Jin-Shun Bi, Sandip Majumdar, Yue Ma, Gao-Bo Xu

{"title":"Analysis of total ionizing dose effect and degradation mechanism of a-IGZO TFT","authors":"Jian-Jian Wang, Gang-Ping Yan, Jin-Shun Bi, Sandip Majumdar, Yue Ma, Gao-Bo Xu","doi":"10.1007/s10854-025-14458-y","DOIUrl":null,"url":null,"abstract":"<div><p>The total ionizing dose (TID) effect of amorphous Indium–Gallium–Zinc Oxide (a-IGZO) thin film transistors (TFT) was investigated in four bias modes. The degradation mechanism induced by TID in various bias modes was analyzed using technology computer-aided design (TCAD) tools. The findings revealed that, in the negative bias mode, the strongest electric field affects the probability of holes in the SiO<sub>2</sub> passivation layer and SiO<sub>2</sub> buffer layer being trapped by interface traps, while also increasing the radiation charge generation rate. Consequently, this led to the most significant degradation in device performance. To alleviate the impact of TID effect on the performance of back-gated a-IGZO TFT, it is necessary to appropriately reduce the thickness of SiO<sub>2</sub> buffer layer and consider alternative passivation layer materials. This will decrease the volume of electron–hole pairs in the dielectric layer under irradiation and minimize the likelihood of the trapping by interface traps. These results lay the groundwork for promoting the application of a-IGZO TFT in space radiation environments.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 6","pages":""},"PeriodicalIF":2.8000,"publicationDate":"2025-02-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Materials Science: Materials in Electronics","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s10854-025-14458-y","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}

引用次数: 0

Abstract

The total ionizing dose (TID) effect of amorphous Indium–Gallium–Zinc Oxide (a-IGZO) thin film transistors (TFT) was investigated in four bias modes. The degradation mechanism induced by TID in various bias modes was analyzed using technology computer-aided design (TCAD) tools. The findings revealed that, in the negative bias mode, the strongest electric field affects the probability of holes in the SiO₂ passivation layer and SiO₂ buffer layer being trapped by interface traps, while also increasing the radiation charge generation rate. Consequently, this led to the most significant degradation in device performance. To alleviate the impact of TID effect on the performance of back-gated a-IGZO TFT, it is necessary to appropriately reduce the thickness of SiO₂ buffer layer and consider alternative passivation layer materials. This will decrease the volume of electron–hole pairs in the dielectric layer under irradiation and minimize the likelihood of the trapping by interface traps. These results lay the groundwork for promoting the application of a-IGZO TFT in space radiation environments.

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来源期刊

Journal of Materials Science: Materials in Electronics 工程技术-材料科学：综合

CiteScore

5.00

自引率

7.10%

发文量

1931

审稿时长

2 months

期刊介绍： The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.