Large ferroelectric response in randomly a-axis orientated CaBi2Nb2O9 thin films by pulsed laser deposition

IF 2.8 4区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Journal of Materials Science: Materials in Electronics Pub Date : 2025-02-25 DOI:10.1007/s10854-025-14405-x

Guanyuan Ren, Jianing Wang, Donghai Ding, Ruihong Liang, Zhiyong Zhou

{"title":"Large ferroelectric response in randomly a-axis orientated CaBi2Nb2O9 thin films by pulsed laser deposition","authors":"Guanyuan Ren, Jianing Wang, Donghai Ding, Ruihong Liang, Zhiyong Zhou","doi":"10.1007/s10854-025-14405-x","DOIUrl":null,"url":null,"abstract":"<div>CaBi2Nb2O9-based (CBN-based) ferroelectric random access memory (FeRAM) has emerged as a promising candidate in the domain of data storage. Nevertheless, a comprehensive investigation into the enhancement of ferroelectric performance and the orientational configuration of FeRAM remains an area that has not been fully explored. Here, the CaBi2Nb2O9/SrRuO3/MgO (CBN/SRO/MgO) stack deposited at 750 °C shows a superior remanent polarization (Pr) of 18.43 μC/cm2 under only coercive field (Ec) of 192 kV/cm. The enhancement of ferroelectric properties can be attributed to the improved crystallinity and the increased random orientational distribution, particularly the deviation from the a-axis orientation. The grain size and grain orientation distribution of the material have been quantitatively analyzed using electron backscatter diffraction (EBSD). It has been revealed that specific orientations with higher Pop values are pivotal in enhancing the polarization switching. A TEM image indicates that a layer-by-layer structure is formed of the stacked films. These findings demonstrate a novel route to designing CBN-based ferroelectric memory devices tailored for information storage and data processing, showcasing the potential for integration into advanced smart electronics of the forthcoming era.</div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 6","pages":""},"PeriodicalIF":2.8000,"publicationDate":"2025-02-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Materials Science: Materials in Electronics","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s10854-025-14405-x","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}

引用次数: 0

Abstract

CaBi₂Nb₂O₉-based (CBN-based) ferroelectric random access memory (FeRAM) has emerged as a promising candidate in the domain of data storage. Nevertheless, a comprehensive investigation into the enhancement of ferroelectric performance and the orientational configuration of FeRAM remains an area that has not been fully explored. Here, the CaBi₂Nb₂O₉/SrRuO₃/MgO (CBN/SRO/MgO) stack deposited at 750 °C shows a superior remanent polarization (P_r) of 18.43 μC/cm² under only coercive field (E_c) of 192 kV/cm. The enhancement of ferroelectric properties can be attributed to the improved crystallinity and the increased random orientational distribution, particularly the deviation from the a-axis orientation. The grain size and grain orientation distribution of the material have been quantitatively analyzed using electron backscatter diffraction (EBSD). It has been revealed that specific orientations with higher P_op values are pivotal in enhancing the polarization switching. A TEM image indicates that a layer-by-layer structure is formed of the stacked films. These findings demonstrate a novel route to designing CBN-based ferroelectric memory devices tailored for information storage and data processing, showcasing the potential for integration into advanced smart electronics of the forthcoming era.

查看原文本刊更多论文

求助全文

约1分钟内获得全文求助全文

来源期刊

Journal of Materials Science: Materials in Electronics 工程技术-材料科学：综合

CiteScore

5.00

自引率

7.10%

发文量

1931

审稿时长

2 months

期刊介绍： The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.