José Manuel Carmona-Cejas, Teona Mirea, Jimena Olivares, Ricardo Hervás, Marta Clement
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引用次数: 0
Abstract
This work presents the design, manufacture and characterization of nitric oxide (NO) sensors operating at high temperatures. The sensors rely on AlN-based solidly mounted resonators (SMRs) as transduction devices. WO3 films are sputtered under different deposition conditions on the upper electrode of the devices to act as functionalization layers. We assess the topography and crystallinity of the layers before and after an annealing process of 350 °C for 12 h in air, observing a dominant monoclinic phase without significant degradation of the Q factor after such process. The characterization of the SMR sensors indicates that sub ppm detection can be achieved by all the studied configurations in the 200–300 °C range, with two of the sensors achieving high sensitivities even at 350 °C. The highest values reported are 5.32 kHz/ppm and 5.48 kHz/ppm for resonant and anti-resonant frequencies at 200 °C.
期刊介绍:
Sensors and Actuators A: Physical brings together multidisciplinary interests in one journal entirely devoted to disseminating information on all aspects of research and development of solid-state devices for transducing physical signals. Sensors and Actuators A: Physical regularly publishes original papers, letters to the Editors and from time to time invited review articles within the following device areas:
• Fundamentals and Physics, such as: classification of effects, physical effects, measurement theory, modelling of sensors, measurement standards, measurement errors, units and constants, time and frequency measurement. Modeling papers should bring new modeling techniques to the field and be supported by experimental results.
• Materials and their Processing, such as: piezoelectric materials, polymers, metal oxides, III-V and II-VI semiconductors, thick and thin films, optical glass fibres, amorphous, polycrystalline and monocrystalline silicon.
• Optoelectronic sensors, such as: photovoltaic diodes, photoconductors, photodiodes, phototransistors, positron-sensitive photodetectors, optoisolators, photodiode arrays, charge-coupled devices, light-emitting diodes, injection lasers and liquid-crystal displays.
• Mechanical sensors, such as: metallic, thin-film and semiconductor strain gauges, diffused silicon pressure sensors, silicon accelerometers, solid-state displacement transducers, piezo junction devices, piezoelectric field-effect transducers (PiFETs), tunnel-diode strain sensors, surface acoustic wave devices, silicon micromechanical switches, solid-state flow meters and electronic flow controllers.
Etc...