Dynamics of Thermal-Induced Sn segregation in GeSn at the Nanometer Scale

IF 6.3 2区材料科学 Q2 CHEMISTRY, PHYSICAL

Journal of Alloys and Compounds Pub Date : 2025-02-25 DOI:10.1016/j.jallcom.2025.179435

Jaime Segura-Ruiz, Valentina Bonino, Martin Rosenthal, Nicolas Pauc, Vincent Calvo, Marvin Frauenrath, Clement Cardoux, Jean-Michel Hartmann, Alexei Chelnokov, Vincent Reboud

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Abstract

Tin segregation can hinder the use of Ge_1-xSn_x in devices. A good understanding of this phenomenon is necessary to avoid this undesired phenomenon. Using Ge_0.83Sn_0.17 micro-disks as a model system, the origin and dynamics of tin segregation during thermal annealing was studied at the nanometer scale. Temperature-steps annealing showed that the onset of segregation occurred at temperatures typically 90°C-95°C higher than the growth temperatures. Interrupted annealing using short 450°C pulses evidenced that segregation always started at single spots and propagated over the entire micro-disk surface in a few seconds. The spatial correlation between dislocations and segregation suggested that such defects were the initiators of such a process. Reducing the density of dislocations in the Ge_1-xSn_x layers should limit tin segregation during thermal annealing, facilitating the integration of this alloy into technological processes requiring temperatures well above the layers’ growth temperature.

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纳米尺度下GeSn中热致锡偏析的动力学研究

锡偏析会阻碍Ge1-xSnx在器件中的使用。为了避免这种不希望出现的现象，很好地理解这种现象是必要的。以Ge0.83Sn0.17微盘为模型体系，研究了纳米尺度下热退火过程中锡偏析的成因和动力学。分步退火表明，偏析发生在比生长温度高90℃-95℃的温度下。采用450°C短脉冲间断退火表明，偏析总是从单个点开始，并在几秒钟内扩展到整个微盘表面。位错和偏析之间的空间相关性表明，这些缺陷是这一过程的启动器。降低Ge1-xSnx层中的位错密度可以限制热退火过程中的锡偏析，从而促进该合金在需要远高于层生长温度的工艺过程中的整合。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Journal of Alloys and Compounds 工程技术-材料科学：综合

CiteScore

11.10

自引率

14.50%

发文量

5146

审稿时长

67 days

期刊介绍： The Journal of Alloys and Compounds is intended to serve as an international medium for the publication of work on solid materials comprising compounds as well as alloys. Its great strength lies in the diversity of discipline which it encompasses, drawing together results from materials science, solid-state chemistry and physics.