Yikang Xiao, Shiqi Ji, Zhengming Zhao, Bochen Shi, Wenhao Xie, Mingyu Yang, Chao Sheng, Weitao Yang
{"title":"Switching Dynamic and EMI Characterization of a 1.2 kV/100 A All-SiC Module With the Easy-2B Package","authors":"Yikang Xiao, Shiqi Ji, Zhengming Zhao, Bochen Shi, Wenhao Xie, Mingyu Yang, Chao Sheng, Weitao Yang","doi":"10.1049/pel2.70011","DOIUrl":null,"url":null,"abstract":"<p>Switching transient processes of silicon carbide (SiC) devices induce several challenges, such as voltage and current overshoots, switching losses, <span></span><math>\n <semantics>\n <mrow>\n <mi>d</mi>\n <mi>v</mi>\n <mo>/</mo>\n <mi>d</mi>\n <mi>t</mi>\n </mrow>\n <annotation>$dv/dt$</annotation>\n </semantics></math>, <span></span><math>\n <semantics>\n <mrow>\n <mi>d</mi>\n <mi>i</mi>\n <mo>/</mo>\n <mi>d</mi>\n <mi>t</mi>\n </mrow>\n <annotation>$di/dt$</annotation>\n </semantics></math>, and electromagnetic interference (EMI), threatening the safe and efficient operation of power electronic systems. Characterization of SiC modules is crucial to address these issues. This paper characterizes the dynamic and EMI performance of a state-of-the-art <span></span><math>\n <semantics>\n <mrow>\n <mn>1.2</mn>\n <mspace></mspace>\n <mtext>kV</mtext>\n <mo>/</mo>\n <mn>100</mn>\n <mspace></mspace>\n <mi>A</mi>\n </mrow>\n <annotation>$1.2 \\text{ kV} / 100 \\text{ A}$</annotation>\n </semantics></math> all-SiC module with the Easy-2B package from Fuji Electric. Using a double pulse test (DPT) platform, the dynamic characteristics are assessed across varying load conditions and gate resistances. Additionally, EMI characteristics of the module are evaluated in a semi-anechoic chamber. Results indicate significant impacts of gate drive parameters and load conditions on switching dynamic and EMI characteristics. These influences are further analyzed based on experimental results and theoretical analysis of the switching transient processes. Finally, the study identifies factors limiting switching speed improvements in SiC modules, including voltage and current overshoots, gate voltage oscillations, and EMI, offering valuable insights for improving device performance.</p>","PeriodicalId":56302,"journal":{"name":"IET Power Electronics","volume":"18 1","pages":""},"PeriodicalIF":1.7000,"publicationDate":"2025-02-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1049/pel2.70011","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IET Power Electronics","FirstCategoryId":"5","ListUrlMain":"https://onlinelibrary.wiley.com/doi/10.1049/pel2.70011","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
Switching transient processes of silicon carbide (SiC) devices induce several challenges, such as voltage and current overshoots, switching losses, , , and electromagnetic interference (EMI), threatening the safe and efficient operation of power electronic systems. Characterization of SiC modules is crucial to address these issues. This paper characterizes the dynamic and EMI performance of a state-of-the-art all-SiC module with the Easy-2B package from Fuji Electric. Using a double pulse test (DPT) platform, the dynamic characteristics are assessed across varying load conditions and gate resistances. Additionally, EMI characteristics of the module are evaluated in a semi-anechoic chamber. Results indicate significant impacts of gate drive parameters and load conditions on switching dynamic and EMI characteristics. These influences are further analyzed based on experimental results and theoretical analysis of the switching transient processes. Finally, the study identifies factors limiting switching speed improvements in SiC modules, including voltage and current overshoots, gate voltage oscillations, and EMI, offering valuable insights for improving device performance.
期刊介绍:
IET Power Electronics aims to attract original research papers, short communications, review articles and power electronics related educational studies. The scope covers applications and technologies in the field of power electronics with special focus on cost-effective, efficient, power dense, environmental friendly and robust solutions, which includes:
Applications:
Electric drives/generators, renewable energy, industrial and consumable applications (including lighting, welding, heating, sub-sea applications, drilling and others), medical and military apparatus, utility applications, transport and space application, energy harvesting, telecommunications, energy storage management systems, home appliances.
Technologies:
Circuits: all type of converter topologies for low and high power applications including but not limited to: inverter, rectifier, dc/dc converter, power supplies, UPS, ac/ac converter, resonant converter, high frequency converter, hybrid converter, multilevel converter, power factor correction circuits and other advanced topologies.
Components and Materials: switching devices and their control, inductors, sensors, transformers, capacitors, resistors, thermal management, filters, fuses and protection elements and other novel low-cost efficient components/materials.
Control: techniques for controlling, analysing, modelling and/or simulation of power electronics circuits and complete power electronics systems.
Design/Manufacturing/Testing: new multi-domain modelling, assembling and packaging technologies, advanced testing techniques.
Environmental Impact: Electromagnetic Interference (EMI) reduction techniques, Electromagnetic Compatibility (EMC), limiting acoustic noise and vibration, recycling techniques, use of non-rare material.
Education: teaching methods, programme and course design, use of technology in power electronics teaching, virtual laboratory and e-learning and fields within the scope of interest.
Special Issues. Current Call for papers:
Harmonic Mitigation Techniques and Grid Robustness in Power Electronic-Based Power Systems - https://digital-library.theiet.org/files/IET_PEL_CFP_HMTGRPEPS.pdf