Vanadium Pentoxide and Bismuth Oxide Thin Films Deposition on PSi for Application in Solar Cells

IF 2.8 3区 材料科学 Q3 CHEMISTRY, PHYSICAL
Silicon Pub Date : 2025-01-16 DOI:10.1007/s12633-024-03216-0
Mustafa Younis Ali, Marwah A. AL-Azzawi, Wedian K. Abad, Ahmed N. Abd
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引用次数: 0

Abstract

In this study, V2O5 and Bi2O3 nanoparticles were synthesized using a hydrolysis method and simple chemical method respectively. PSi was prepared by electrochemical etching method. The samples were characterized by X-ray diffraction (XRD), Atomic force microscopy (AFM), Scanning electron microscope (SEM), ultra violet-visible (UV–Vis), Fourier transform infrared (FTIR) and PL emission. From X-ray pattern of PSi, it observed a strong peak of (PSi) at 2θ = 69.04 and 69.24 is confirming the mono-crystalline structure of the Si layer. from AFM of freshly prepared porous silicon found the surface form like hillocks with un-uniform different heights surface. with RMS roughness (Sq): 3.62 nm, Mean roughness (Sa): 2.43 nm and Maximum height (Sz): 61.39. it was a single peak emission at 647 nm was due to PSi nano-crystalline. FTIR spectrum identified the most important functional groups involved in the formation of PSi. The mean crystalline size of V2O5 and Bi2O3 nanoparticles was found to be around (19.70 and 28.57) nm. The morphology of the synthesized V2O5. and Bi2O3 NPs was observed exhibits lamellar structure with diameters 68.08 nm and 32.18 nm respectively. FTIR spectrum identified the most important functional groups involved in the formation of V2O5 and Bi2O3. The optical band gap of V2O5-NPs was found to be 3 eV and Bi2O3 NPs was (4.52 eV). The efficiency of the fabricated solar cell was found to be 1.38% and filling factor 20.62%.

在PSi上沉积五氧化二钒和氧化铋薄膜在太阳能电池中的应用
本研究分别采用水解法和简单化学法合成了V2O5和Bi2O3纳米颗粒。采用电化学蚀刻法制备PSi。采用x射线衍射(XRD)、原子力显微镜(AFM)、扫描电镜(SEM)、紫外-可见(UV-Vis)、傅里叶变换红外(FTIR)和PL发射光谱对样品进行了表征。从PSi的x射线图中观察到,PSi在2θ = 69.04和69.24处有一个很强的峰值,证实了Si层的单晶结构。对新制备的多孔硅进行AFM分析,发现其表面呈小山状,表面高度不均匀。RMS粗糙度(Sq): 3.62 nm,平均粗糙度(Sa): 2.43 nm,最大高度(Sz): 61.39。在647 nm处为单峰发射,这是由PSi纳米晶体引起的。FTIR光谱确定了PSi形成过程中最重要的官能团。V2O5和Bi2O3纳米颗粒的平均晶粒尺寸分别为(19.70和28.57)nm。合成的V2O5的形貌。制备的Bi2O3纳米颗粒呈片层状结构,直径分别为68.08 nm和32.18 nm。FTIR光谱确定了V2O5和Bi2O3形成过程中最重要的官能团。V2O5-NPs的光学带隙为3 eV, Bi2O3 NPs的光学带隙为4.52 eV。制备的太阳能电池效率为1.38%,填充系数为20.62%。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
Silicon
Silicon CHEMISTRY, PHYSICAL-MATERIALS SCIENCE, MULTIDISCIPLINARY
CiteScore
5.90
自引率
20.60%
发文量
685
审稿时长
>12 weeks
期刊介绍: The journal Silicon is intended to serve all those involved in studying the role of silicon as an enabling element in materials science. There are no restrictions on disciplinary boundaries provided the focus is on silicon-based materials or adds significantly to the understanding of such materials. Accordingly, such contributions are welcome in the areas of inorganic and organic chemistry, physics, biology, engineering, nanoscience, environmental science, electronics and optoelectronics, and modeling and theory. Relevant silicon-based materials include, but are not limited to, semiconductors, polymers, composites, ceramics, glasses, coatings, resins, composites, small molecules, and thin films.
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