Tailoring the properties of ZnO thin films by low energy ion beam interaction

IF 2.8 4区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Journal of Materials Science: Materials in Electronics Pub Date : 2025-02-24 DOI:10.1007/s10854-025-14446-2

Sikta Mandal, Shushant Kumar Singh, Pravin Kumar, Udai P. Singh

{"title":"Tailoring the properties of ZnO thin films by low energy ion beam interaction","authors":"Sikta Mandal, Shushant Kumar Singh, Pravin Kumar, Udai P. Singh","doi":"10.1007/s10854-025-14446-2","DOIUrl":null,"url":null,"abstract":"<div><p>Thin films of Zinc Oxide (ZnO) were fabricated using RF sputtering technique on glass as well as ITO substrates. Subsequently, the films were processed by low energy ion beams to modify their properties. The implantation of 200 keV Ni<sup>−</sup> beam was carried out in ZnO films with various ion fluences ranging from 5 E15 to 2 E16 ions/cm<sup>2</sup>. Characterization of the as deposited and ion beam processed films employed various techniques. The FESEM imaging revealed that ZnO surfaces exhibited rupture indicative of ion incorporation. The XRD analysis highlighted distinct changes. The ZnO films showed enhanced crystallinity after ion implantation. The optical properties studied by UV–Vis Spectroscopy showed that the ion implanted ZnO films have highest transmittance of ~ 80%. As deduced from Hall measurements, the conductivity and carrier concentration in ZnO films increase with increasing the fluences, however, at highest ion fluence, these values decrease. These findings underscore the subtle impact of ion beam processes on semiconductor thin films, crucial for optimizing their performance in electronic applications.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 6","pages":""},"PeriodicalIF":2.8000,"publicationDate":"2025-02-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Materials Science: Materials in Electronics","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s10854-025-14446-2","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}

引用次数: 0

Abstract

Thin films of Zinc Oxide (ZnO) were fabricated using RF sputtering technique on glass as well as ITO substrates. Subsequently, the films were processed by low energy ion beams to modify their properties. The implantation of 200 keV Ni⁻ beam was carried out in ZnO films with various ion fluences ranging from 5 E15 to 2 E16 ions/cm². Characterization of the as deposited and ion beam processed films employed various techniques. The FESEM imaging revealed that ZnO surfaces exhibited rupture indicative of ion incorporation. The XRD analysis highlighted distinct changes. The ZnO films showed enhanced crystallinity after ion implantation. The optical properties studied by UV–Vis Spectroscopy showed that the ion implanted ZnO films have highest transmittance of ~ 80%. As deduced from Hall measurements, the conductivity and carrier concentration in ZnO films increase with increasing the fluences, however, at highest ion fluence, these values decrease. These findings underscore the subtle impact of ion beam processes on semiconductor thin films, crucial for optimizing their performance in electronic applications.

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来源期刊

Journal of Materials Science: Materials in Electronics 工程技术-材料科学：综合

CiteScore

5.00

自引率

7.10%

发文量

1931

审稿时长

2 months

期刊介绍： The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.