Enhancement of Ag sintering reactions through high-density (111) orientation Ag nanotwins for the die bonding of SiC chips with DBC alumina substrates

IF 2.8 4区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Journal of Materials Science: Materials in Electronics Pub Date : 2025-02-24 DOI:10.1007/s10854-025-14451-5

Yin-Hsuan Chen, Chun-Hao Chen, Devi Indrawati Syafei, Yen-Ting Chen, Che-Yuan Chang, Tung-Han Chuang

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引用次数: 0

Abstract

Ag sintering has become a preferred die bonding method for power IC packages due to its exceptional thermal, mechanical, and electrical properties. While it is widely recognized for its potential in high-power semiconductor applications, few research efforts have emerged that consider how the backside metallization films of the IC can enhance the sintering layer’s properties. This research focused on the enhancement of silver sintering for bonding of Cr/Ni/Ag and Cr/nanotwinned Ag-metallized film on silicon carbide (SiC) chips to direct bonded copper (DBC) substrates to investigate the beneficial effects of (111)-textured Ag nanotwinned films on the bonding strength increase and porosity reduction. Results reveal that the nanotwinned Ag films significantly reduce porosity and enhance bonding strength compared to conventional Cr/Ni/Ag films, under both pressurized and pressureless conditions. Implications for the improvements in reducing porosity and increasing bonding strength due to the nanotwin structure and further research are also discussed, opening new possibilities for advanced power electronic packaging technology.

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来源期刊

Journal of Materials Science: Materials in Electronics 工程技术-材料科学：综合

CiteScore

5.00

自引率

7.10%

发文量

1931

审稿时长

2 months

期刊介绍： The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.