N2O Reduction on Surfaces of V-Si48, V-C48, V-B24N24, V-CNT(6, 0) and V-BNNT(6, 0)) as Catalysts

IF 2.8 3区 材料科学 Q3 CHEMISTRY, PHYSICAL
Silicon Pub Date : 2025-01-27 DOI:10.1007/s12633-025-03223-9
Zahraa Sabah Ghnim, Farag M. A. Altalbawy, Shelesh Krishna Saraswat, Rekha M M, Guntaj J, Navin Kedia, M. Ravi Kumar, Ayat Hussein Adhab, Morug Salih Mahdi, Aseel Salah Mansoor, Usama Kadem Radi, Nasr Saadoun Abd
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引用次数: 0

Abstract

In this study, the catalytic activity of Vanadium doped Si, C and BN nanocages and Vanadium doped Si, C and BN nanotube (6, 0) for N2O reduction to create the CO, CO2, N2 and O2 molecules are investigated by computational models. The reaction steps of V–O* + CO → V* + CO2, V–O* + ethylene → V* + ethylene oxide and V–O* + N2O → V* + N2 + O2 mechanisms for N2O reduction are examined. The ΔGreaction values for N2O reduction on Vanadium doped Si, C and BN nanotube (6, 0) are more negative than Vanadium doped Si, C and BN nanocages. The Eactivation values of V–O* + N2O → V* + N2 + O2 are higher than V–O* + CO → V* + CO2, V–O* + ethylene → V* + ethylene oxide mechanisms. The V–O* + CO → V* + CO2 and V–O* + ethylene → V* + ethylene oxide mechanisms are acceptable pathways for N2O reduction on Vanadium doped Si, C and BN nanocages and Vanadium doped Si, C and BN nanotube (6, 0). The Vanadium doped-Si and BN nanotube (6, 0) are proposed as effective catalysts for N2O reduction with high performance.

V-Si48、V-C48、V-B24N24、V-CNT(6,0)和V-BNNT(6,0))表面N2O还原催化剂的研究
本研究通过计算模型研究了钒掺杂Si、C和BN纳米笼和钒掺杂Si、C和BN纳米管(6,0)对N2O还原生成CO、CO2、N2和O2分子的催化活性。考察了V - o * + CO→V* + CO2、V - o * +乙烯→V* +环氧乙烷、V - o * + N2O→V* + N2 + O2还原N2O的反应机理。掺钒Si、C和BN纳米管上N2O还原的ΔGreaction值(6,0)比掺钒Si、C和BN纳米管负得多。V - o * + N2O→V* + N2 + O2的活化值高于V - o * + CO→V* + CO2、V - o * +乙烯→V* +环氧乙烷的活化值。V - o * + CO→V* + CO2和V - o * +乙烯→V* +环氧乙烷是在掺钒Si、C、BN纳米笼和掺钒Si、C、BN纳米管上还原N2O的有效途径(6,0),掺钒Si和BN纳米管(6,0)是高效还原N2O的有效催化剂。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
Silicon
Silicon CHEMISTRY, PHYSICAL-MATERIALS SCIENCE, MULTIDISCIPLINARY
CiteScore
5.90
自引率
20.60%
发文量
685
审稿时长
>12 weeks
期刊介绍: The journal Silicon is intended to serve all those involved in studying the role of silicon as an enabling element in materials science. There are no restrictions on disciplinary boundaries provided the focus is on silicon-based materials or adds significantly to the understanding of such materials. Accordingly, such contributions are welcome in the areas of inorganic and organic chemistry, physics, biology, engineering, nanoscience, environmental science, electronics and optoelectronics, and modeling and theory. Relevant silicon-based materials include, but are not limited to, semiconductors, polymers, composites, ceramics, glasses, coatings, resins, composites, small molecules, and thin films.
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