Zahraa Sabah Ghnim, Farag M. A. Altalbawy, Shelesh Krishna Saraswat, Rekha M M, Guntaj J, Navin Kedia, M. Ravi Kumar, Ayat Hussein Adhab, Morug Salih Mahdi, Aseel Salah Mansoor, Usama Kadem Radi, Nasr Saadoun Abd
{"title":"N2O Reduction on Surfaces of V-Si48, V-C48, V-B24N24, V-CNT(6, 0) and V-BNNT(6, 0)) as Catalysts","authors":"Zahraa Sabah Ghnim, Farag M. A. Altalbawy, Shelesh Krishna Saraswat, Rekha M M, Guntaj J, Navin Kedia, M. Ravi Kumar, Ayat Hussein Adhab, Morug Salih Mahdi, Aseel Salah Mansoor, Usama Kadem Radi, Nasr Saadoun Abd","doi":"10.1007/s12633-025-03223-9","DOIUrl":null,"url":null,"abstract":"<div><p>In this study, the catalytic activity of Vanadium doped Si, C and BN nanocages and Vanadium doped Si, C and BN nanotube (6, 0) for N<sub>2</sub>O reduction to create the CO, CO<sub>2</sub>, N<sub>2</sub> and O<sub>2</sub> molecules are investigated by computational models. The reaction steps of V–O* + CO → V* + CO<sub>2</sub>, V–O* + ethylene → V* + ethylene oxide and V–O* + N<sub>2</sub>O → V* + N<sub>2</sub> + O<sub>2</sub> mechanisms for N<sub>2</sub>O reduction are examined. The ΔG<sub>reaction</sub> values for N<sub>2</sub>O reduction on Vanadium doped Si, C and BN nanotube (6, 0) are more negative than Vanadium doped Si, C and BN nanocages. The E<sub>activation</sub> values of V–O* + N<sub>2</sub>O → V* + N<sub>2</sub> + O<sub>2</sub> are higher than V–O* + CO → V* + CO<sub>2</sub>, V–O* + ethylene → V* + ethylene oxide mechanisms. The V–O* + CO → V* + CO<sub>2</sub> and V–O* + ethylene → V* + ethylene oxide mechanisms are acceptable pathways for N<sub>2</sub>O reduction on Vanadium doped Si, C and BN nanocages and Vanadium doped Si, C and BN nanotube (6, 0). The Vanadium doped-Si and BN nanotube (6, 0) are proposed as effective catalysts for N<sub>2</sub>O reduction with high performance.</p></div>","PeriodicalId":776,"journal":{"name":"Silicon","volume":"17 3","pages":"685 - 695"},"PeriodicalIF":2.8000,"publicationDate":"2025-01-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Silicon","FirstCategoryId":"88","ListUrlMain":"https://link.springer.com/article/10.1007/s12633-025-03223-9","RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"CHEMISTRY, PHYSICAL","Score":null,"Total":0}
引用次数: 0
Abstract
In this study, the catalytic activity of Vanadium doped Si, C and BN nanocages and Vanadium doped Si, C and BN nanotube (6, 0) for N2O reduction to create the CO, CO2, N2 and O2 molecules are investigated by computational models. The reaction steps of V–O* + CO → V* + CO2, V–O* + ethylene → V* + ethylene oxide and V–O* + N2O → V* + N2 + O2 mechanisms for N2O reduction are examined. The ΔGreaction values for N2O reduction on Vanadium doped Si, C and BN nanotube (6, 0) are more negative than Vanadium doped Si, C and BN nanocages. The Eactivation values of V–O* + N2O → V* + N2 + O2 are higher than V–O* + CO → V* + CO2, V–O* + ethylene → V* + ethylene oxide mechanisms. The V–O* + CO → V* + CO2 and V–O* + ethylene → V* + ethylene oxide mechanisms are acceptable pathways for N2O reduction on Vanadium doped Si, C and BN nanocages and Vanadium doped Si, C and BN nanotube (6, 0). The Vanadium doped-Si and BN nanotube (6, 0) are proposed as effective catalysts for N2O reduction with high performance.
期刊介绍:
The journal Silicon is intended to serve all those involved in studying the role of silicon as an enabling element in materials science. There are no restrictions on disciplinary boundaries provided the focus is on silicon-based materials or adds significantly to the understanding of such materials. Accordingly, such contributions are welcome in the areas of inorganic and organic chemistry, physics, biology, engineering, nanoscience, environmental science, electronics and optoelectronics, and modeling and theory. Relevant silicon-based materials include, but are not limited to, semiconductors, polymers, composites, ceramics, glasses, coatings, resins, composites, small molecules, and thin films.