Impact of annealing and nanostructuring on properties of NV centers created by different techniques

IF 4.3 3区材料科学 Q2 MATERIALS SCIENCE, COATINGS & FILMS

Diamond and Related Materials Pub Date : 2025-02-19 DOI:10.1016/j.diamond.2025.112126

Miriam Mendoza Delgado , Lucas Tsunaki , Shaul Michaelson , Mohan K. Kuntumalla , Johann P. Reithmaier , Alon Hoffman , Boris Naydenov , Cyril Popov

{"title":"Impact of annealing and nanostructuring on properties of NV centers created by different techniques","authors":"Miriam Mendoza Delgado , Lucas Tsunaki , Shaul Michaelson , Mohan K. Kuntumalla , Johann P. Reithmaier , Alon Hoffman , Boris Naydenov , Cyril Popov","doi":"10.1016/j.diamond.2025.112126","DOIUrl":null,"url":null,"abstract":"<div><div>Nitrogen-vacancy (NV) centers in diamonds have been an epicenter of research for diverse applications in quantum technologies. It is therefore imperative that their fabrication techniques are well understood and characterized for the technological scalability of these applications. A comparative study of the optical and spin properties of NVs created by ion implantation and chemical vapor deposition delta-doping is thus presented, combined with an investigation on the impact of annealing in vacuum at different temperatures. In addition, nanopillars are fabricated by electron beam lithography and reactive ion etching for enhanced photon collection efficiency. An extensive combination of characterization techniques is employed. Notably, the smallest nanopillars present fluorescence enhancements of factor around 50, compared to the unstructured regions. Annealing is also demonstrated to increase the optical contrast between the NVs' electronic states, the coherence and relaxation times both in bulk as in pillars. Regarding the NV preparation technique, the delta-doping is shown to create NVs with less lattice defects and strain compared to implantation.</div></div>","PeriodicalId":11266,"journal":{"name":"Diamond and Related Materials","volume":"154 ","pages":"Article 112126"},"PeriodicalIF":4.3000,"publicationDate":"2025-02-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Diamond and Related Materials","FirstCategoryId":"88","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0925963525001839","RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"MATERIALS SCIENCE, COATINGS & FILMS","Score":null,"Total":0}

引用次数: 0

Abstract

Nitrogen-vacancy (NV) centers in diamonds have been an epicenter of research for diverse applications in quantum technologies. It is therefore imperative that their fabrication techniques are well understood and characterized for the technological scalability of these applications. A comparative study of the optical and spin properties of NVs created by ion implantation and chemical vapor deposition delta-doping is thus presented, combined with an investigation on the impact of annealing in vacuum at different temperatures. In addition, nanopillars are fabricated by electron beam lithography and reactive ion etching for enhanced photon collection efficiency. An extensive combination of characterization techniques is employed. Notably, the smallest nanopillars present fluorescence enhancements of factor around 50, compared to the unstructured regions. Annealing is also demonstrated to increase the optical contrast between the NVs' electronic states, the coherence and relaxation times both in bulk as in pillars. Regarding the NV preparation technique, the delta-doping is shown to create NVs with less lattice defects and strain compared to implantation.

Abstract Image

查看原文本刊更多论文

退火和纳米结构对通过不同技术制造的 NV 中心特性的影响

金刚石中的氮空位（NV）中心一直是量子技术各种应用研究的中心。因此，为了实现这些应用的技术可扩展性，必须充分了解其制造技术并对其进行表征。因此，本文对通过离子注入和化学气相沉积三角掺杂法制备的 NV 的光学和自旋特性进行了比较研究，并对不同温度下真空退火的影响进行了调查。此外，还通过电子束光刻和反应离子蚀刻制造了纳米柱，以提高光子收集效率。此外，还采用了多种表征技术。值得注意的是，与无结构区域相比，最小纳米柱的荧光增强系数约为 50。退火也被证明可以增加 NV 电子态之间的光学对比度、相干性和弛豫时间，无论是在块状还是在柱状中都是如此。在 NV 制备技术方面，与植入法相比，掺掺掺掺三角掺杂法能产生晶格缺陷和应变较少的 NV。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

Diamond and Related Materials 工程技术-材料科学：综合

CiteScore

6.00

自引率

14.60%

发文量

702

审稿时长

2.1 months

期刊介绍： DRM is a leading international journal that publishes new fundamental and applied research on all forms of diamond, the integration of diamond with other advanced materials and development of technologies exploiting diamond. The synthesis, characterization and processing of single crystal diamond, polycrystalline films, nanodiamond powders and heterostructures with other advanced materials are encouraged topics for technical and review articles. In addition to diamond, the journal publishes manuscripts on the synthesis, characterization and application of other related materials including diamond-like carbons, carbon nanotubes, graphene, and boron and carbon nitrides. Articles are sought on the chemical functionalization of diamond and related materials as well as their use in electrochemistry, energy storage and conversion, chemical and biological sensing, imaging, thermal management, photonic and quantum applications, electron emission and electronic devices. The International Conference on Diamond and Carbon Materials has evolved into the largest and most well attended forum in the field of diamond, providing a forum to showcase the latest results in the science and technology of diamond and other carbon materials such as carbon nanotubes, graphene, and diamond-like carbon. Run annually in association with Diamond and Related Materials the conference provides junior and established researchers the opportunity to exchange the latest results ranging from fundamental physical and chemical concepts to applied research focusing on the next generation carbon-based devices.