Sub-nm kinetically controlled liquid metal printing of ternary antimony indium oxide transistors

IF 17.3 1区材料科学 Q1 MATERIALS SCIENCE, MULTIDISCIPLINARY

Matter Pub Date : 2025-02-24 DOI:10.1016/j.matt.2025.102003

Samuel W. Ong, Simon A. Agnew, Md Saifur Rahman, William J. Scheideler

{"title":"Sub-nm kinetically controlled liquid metal printing of ternary antimony indium oxide transistors","authors":"Samuel W. Ong, Simon A. Agnew, Md Saifur Rahman, William J. Scheideler","doi":"10.1016/j.matt.2025.102003","DOIUrl":null,"url":null,"abstract":"Two-dimensional (2D) metal oxide semiconductors offer a superlative combination of high electron mobility and visible-range transparency uniquely suitable for flexible transparent electronics. Synthesis of these ultrathin (<3 nm) semiconductors by Cabrera-Mott oxidation of liquid metals could enable emerging device applications but requires the precise design of their electrostatics at the nanoscale. This study demonstrates sub-nanometer-level control over the thickness of semiconducting 2D antimony-doped indium oxide (AIO) by manipulating the kinetics of Cabrera-Mott oxidation through variable-speed liquid metal printing at plastic-compatible temperatures (175°C). By modulating both the growth kinetics and doping, we engineer the conductivity and crystallinity of AIO for integration in ultrathin channel transistors exhibiting exceptional steep turn-on, on-off ratios > 106 and an outstanding average mobility of 34.7 ± 12.9 cm2/Vs. This result shows the potential for kinetically controlling 2D oxide synthesis for various high-performance optoelectronic device applications.","PeriodicalId":388,"journal":{"name":"Matter","volume":"36 1","pages":""},"PeriodicalIF":17.3000,"publicationDate":"2025-02-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Matter","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.1016/j.matt.2025.102003","RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}

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Abstract

Two-dimensional (2D) metal oxide semiconductors offer a superlative combination of high electron mobility and visible-range transparency uniquely suitable for flexible transparent electronics. Synthesis of these ultrathin (<3 nm) semiconductors by Cabrera-Mott oxidation of liquid metals could enable emerging device applications but requires the precise design of their electrostatics at the nanoscale. This study demonstrates sub-nanometer-level control over the thickness of semiconducting 2D antimony-doped indium oxide (AIO) by manipulating the kinetics of Cabrera-Mott oxidation through variable-speed liquid metal printing at plastic-compatible temperatures (175°C). By modulating both the growth kinetics and doping, we engineer the conductivity and crystallinity of AIO for integration in ultrathin channel transistors exhibiting exceptional steep turn-on, on-off ratios > 10⁶ and an outstanding average mobility of 34.7 ± 12.9 cm²/Vs. This result shows the potential for kinetically controlling 2D oxide synthesis for various high-performance optoelectronic device applications.

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来源期刊

Matter MATERIALS SCIENCE, MULTIDISCIPLINARY-

CiteScore

26.30

自引率

2.60%

发文量

367

期刊介绍： Matter, a monthly journal affiliated with Cell, spans the broad field of materials science from nano to macro levels,covering fundamentals to applications. Embracing groundbreaking technologies,it includes full-length research articles,reviews, perspectives,previews, opinions, personnel stories, and general editorial content. Matter aims to be the primary resource for researchers in academia and industry, inspiring the next generation of materials scientists.