{"title":"A 100-MHz bandwidth continuous-time sigma-delta ADC with 1 V supply in 28 nm CMOS","authors":"Ben He , Xuan Guo , Hanbo Jia , Xinyu Liu","doi":"10.1016/j.mejo.2025.106597","DOIUrl":null,"url":null,"abstract":"<div><div>A fourth-order continuous-time (CT) sigma-delta modulator (SDM) is presented for RF front-end system-on-chip (SoC) applications. Due to system constraints, only a 1 V power supply is available. To address this, we propose a three-stage operational amplifier with feedforward compensation that operates efficiently at low voltage. This amplifier achieves a DC gain of 78.5 dB and maintains a gain of 53.4 dB at an input signal frequency of 100 MHz, with a unity gain bandwidth of only 4.2 GHz. In contrast, traditional Miller-compensated operational amplifiers would require a unity gain bandwidth as high as 40.7 GHz to achieve similar performance. To mitigate DAC unit cell mismatch, we propose a dynamic element matching (DEM) circuit implementation utilizing a data-weighted averaging (DWA) algorithm. By removing the DEM block from the loop, the delay of this block does not affect the delay of the loop filter. This DEM technique enhances the signal-to-noise and distortion ratio (SNDR) by 13.9 dB and the spurious-free dynamic range (SFDR) by 20 dB. The prototype, implemented using a 28 nm CMOS process, achieves a dynamic range (DR) of 73.7 dB and a peak SNDR of 66.8 dB.</div></div>","PeriodicalId":49818,"journal":{"name":"Microelectronics Journal","volume":"158 ","pages":"Article 106597"},"PeriodicalIF":1.9000,"publicationDate":"2025-02-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Microelectronics Journal","FirstCategoryId":"5","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S1879239125000463","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
A fourth-order continuous-time (CT) sigma-delta modulator (SDM) is presented for RF front-end system-on-chip (SoC) applications. Due to system constraints, only a 1 V power supply is available. To address this, we propose a three-stage operational amplifier with feedforward compensation that operates efficiently at low voltage. This amplifier achieves a DC gain of 78.5 dB and maintains a gain of 53.4 dB at an input signal frequency of 100 MHz, with a unity gain bandwidth of only 4.2 GHz. In contrast, traditional Miller-compensated operational amplifiers would require a unity gain bandwidth as high as 40.7 GHz to achieve similar performance. To mitigate DAC unit cell mismatch, we propose a dynamic element matching (DEM) circuit implementation utilizing a data-weighted averaging (DWA) algorithm. By removing the DEM block from the loop, the delay of this block does not affect the delay of the loop filter. This DEM technique enhances the signal-to-noise and distortion ratio (SNDR) by 13.9 dB and the spurious-free dynamic range (SFDR) by 20 dB. The prototype, implemented using a 28 nm CMOS process, achieves a dynamic range (DR) of 73.7 dB and a peak SNDR of 66.8 dB.
期刊介绍:
Published since 1969, the Microelectronics Journal is an international forum for the dissemination of research and applications of microelectronic systems, circuits, and emerging technologies. Papers published in the Microelectronics Journal have undergone peer review to ensure originality, relevance, and timeliness. The journal thus provides a worldwide, regular, and comprehensive update on microelectronic circuits and systems.
The Microelectronics Journal invites papers describing significant research and applications in all of the areas listed below. Comprehensive review/survey papers covering recent developments will also be considered. The Microelectronics Journal covers circuits and systems. This topic includes but is not limited to: Analog, digital, mixed, and RF circuits and related design methodologies; Logic, architectural, and system level synthesis; Testing, design for testability, built-in self-test; Area, power, and thermal analysis and design; Mixed-domain simulation and design; Embedded systems; Non-von Neumann computing and related technologies and circuits; Design and test of high complexity systems integration; SoC, NoC, SIP, and NIP design and test; 3-D integration design and analysis; Emerging device technologies and circuits, such as FinFETs, SETs, spintronics, SFQ, MTJ, etc.
Application aspects such as signal and image processing including circuits for cryptography, sensors, and actuators including sensor networks, reliability and quality issues, and economic models are also welcome.