{"title":"Competitive mechanism between light extraction efficiency and sidewall passivated effect in the green micro-LEDs with varied thickness of Al<sub>2</sub>O<sub>3</sub>layer.","authors":"Youcai Deng, Denghai Li, Yurong Dai, Zongmin Lin, Youqin Lin, Zongyuan Liu, Xinxing Chen, Hao-Chung Kuo, Zhong Chen, Shouqiang Lai, Tingzhu Wu","doi":"10.1088/1361-6528/adb852","DOIUrl":null,"url":null,"abstract":"<p><p>In this study, green micro-light-emitting diodes (<i>μ</i>-LEDs) with Al<sub>2</sub>O<sub>3</sub>layers of varying thicknesses (0, 30, 60, and 90 nm) was fabricated using atomic layer deposition (ALD) technology. The optoelectronic characteristics of devices was measured and investigated. Current-voltage (<i>I</i>-<i>V</i>) measurements indicate that the ALD passivation layer effectively reduces leakage current. By applying the<i>ABC + f(n)</i>model to analyze external quantum efficiency, the internal physical mechanisms that the ALD passivation layer enhances the optoelectronic performance of green<i>μ</i>-LEDs was identified. Optical simulations demonstrated the transmittance relationship for different ALD passivation layer thicknesses, explaining improvements of light extraction efficiency. Furthermore, aging tests confirmed that the ALD passivation layer significantly increases the stability of green<i>μ</i>-LEDs. These findings offer valuable insights for enhancing the luminous efficiency and reliability of green<i>μ</i>-LEDs.</p>","PeriodicalId":19035,"journal":{"name":"Nanotechnology","volume":" ","pages":""},"PeriodicalIF":2.9000,"publicationDate":"2025-02-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Nanotechnology","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.1088/1361-6528/adb852","RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0
Abstract
In this study, green micro-light-emitting diodes (μ-LEDs) with Al2O3layers of varying thicknesses (0, 30, 60, and 90 nm) was fabricated using atomic layer deposition (ALD) technology. The optoelectronic characteristics of devices was measured and investigated. Current-voltage (I-V) measurements indicate that the ALD passivation layer effectively reduces leakage current. By applying theABC + f(n)model to analyze external quantum efficiency, the internal physical mechanisms that the ALD passivation layer enhances the optoelectronic performance of greenμ-LEDs was identified. Optical simulations demonstrated the transmittance relationship for different ALD passivation layer thicknesses, explaining improvements of light extraction efficiency. Furthermore, aging tests confirmed that the ALD passivation layer significantly increases the stability of greenμ-LEDs. These findings offer valuable insights for enhancing the luminous efficiency and reliability of greenμ-LEDs.
期刊介绍:
The journal aims to publish papers at the forefront of nanoscale science and technology and especially those of an interdisciplinary nature. Here, nanotechnology is taken to include the ability to individually address, control, and modify structures, materials and devices with nanometre precision, and the synthesis of such structures into systems of micro- and macroscopic dimensions such as MEMS based devices. It encompasses the understanding of the fundamental physics, chemistry, biology and technology of nanometre-scale objects and how such objects can be used in the areas of computation, sensors, nanostructured materials and nano-biotechnology.