{"title":"Electronic structure of Sn–Se thin films characterized by photothermal deflection spectroscopy","authors":"Aoi Iida, Tamihiro Gotoh","doi":"10.1007/s10854-025-14452-4","DOIUrl":null,"url":null,"abstract":"<div><p>Chalcogenide semiconductors that contain S, Se and Te as their main components exhibit characteristic properties that stem from the electronic structure of the chalcogen atoms. In particular, they have recently attracted attention as materials for thermoelectric devices, phase-change memories, and electrical switches. In this study, we focused on Sn–Se as a binary chalcogenide, and fabricated thin films and evaluated their electronic properties. The band gap of the Sn–Se films prepared by vacuum deposition was ~ 1.10 eV. The electrical resistivity showed a thermal activation type, and a decrease in resistivity of more than two orders of magnitude was observed by heat treatment at 300 °C. Subgap optical absorption was measured by photothermal deflection spectroscopy, and four types of in-gap states were found. Based on these experimental results, a band model including localized states is discussed.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 6","pages":""},"PeriodicalIF":2.8000,"publicationDate":"2025-02-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Materials Science: Materials in Electronics","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s10854-025-14452-4","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
Chalcogenide semiconductors that contain S, Se and Te as their main components exhibit characteristic properties that stem from the electronic structure of the chalcogen atoms. In particular, they have recently attracted attention as materials for thermoelectric devices, phase-change memories, and electrical switches. In this study, we focused on Sn–Se as a binary chalcogenide, and fabricated thin films and evaluated their electronic properties. The band gap of the Sn–Se films prepared by vacuum deposition was ~ 1.10 eV. The electrical resistivity showed a thermal activation type, and a decrease in resistivity of more than two orders of magnitude was observed by heat treatment at 300 °C. Subgap optical absorption was measured by photothermal deflection spectroscopy, and four types of in-gap states were found. Based on these experimental results, a band model including localized states is discussed.
期刊介绍：
The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
