Metamorphic InAs/InGaAs Quantum Dot Heterostructures for Single-Photon Generation in the C-Band Spectral Range

Abstract

Heterostructures with InAs/InGaAs quantum dots and In_xGa_1–xAs/GaAs(001) metamorphic buffer layers are grown by molecular-beam epitaxy. The structures are designed to obtain single-photon emission in the telecommunication C-band wavelength range. The possibility of reducing the thickness of the In_xGa_1–xAs graded layer in order to form efficient microcavity structures with a cavity length as small as two wavelengths is examined. The structures with metamorphic buffer layers grown on top of an Al_0.9Ga_0.1As/GaAs distributed Bragg reflector are grown and characterized by cross-sectional transmission electron microscopy and photoluminescence spectroscopy.