Photosensitive MIS structures based on GeSixOy films

IF 3.8 3区材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY

Optical Materials Pub Date : 2025-02-21 DOI:10.1016/j.optmat.2025.116838

G.A. Hamoud , G.N. Kamaev , M. Vergnat , V.A. Volodin

引用次数: 0

Abstract

The structural and photosensitive properties of metal-insulator-semiconductor (MIS) structures based on germanosilicate (GeSi_xO_y) films, obtained by co-evaporation of silicon dioxide and germanium dioxide and deposited on a n-type silicon substrate with silicon oxide as a thin tunnel layer, have been studied. The responsivity properties of the MIS structures were obtained over a wide wavelength range from 278 to 1100 nm. The deposition of an additional 3–4 nm thick layer of amorphous germanium on the thin silicon oxide dielectric layer resulted in an increase in infrared responsivity. The proposed method for creating photosensitive MIS-structures based on GeSi_xO_y films is simple and avoids the formation of p-n junctions to create photodiodes.

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来源期刊

Optical Materials 工程技术-材料科学：综合

CiteScore

6.60

自引率

12.80%

发文量

1265

审稿时长

38 days

期刊介绍： Optical Materials has an open access mirror journal Optical Materials: X, sharing the same aims and scope, editorial team, submission system and rigorous peer review. The purpose of Optical Materials is to provide a means of communication and technology transfer between researchers who are interested in materials for potential device applications. The journal publishes original papers and review articles on the design, synthesis, characterisation and applications of optical materials. OPTICAL MATERIALS focuses on: • Optical Properties of Material Systems; • The Materials Aspects of Optical Phenomena; • The Materials Aspects of Devices and Applications. Authors can submit separate research elements describing their data to Data in Brief and methods to Methods X.