Numerical investigation on the effect of growth conditions on silicon carbide growth in chemical vapor deposition

Abstract

The growth of silicon carbide (SiC) by chemical vapor deposition (CVD) is influenced by process parameters, and the growth rate and the uniformity of film can be improved by optimizing the parameters. In this paper, we propose a method for optimizing SiC-CVD process parameters based on the combined theory of Computational Fluid Dynamics (CFD) and Design of Experiment (DOE). Herein, the flow stability in the Buffered Distributed Spray (BDS) reactor was studied over a wide range of process conditions to determine the flow states and characteristics, thereby identifying the suitable process parameter range for SiC-CVD. Through simulation validation, a deposition rate of up to 24.8 μm/h with film uniformity below 5 % was achieved. This study provides both an effective solution for high-quality epitaxial growth and a theoretical basis for subsequent experiments.