{"title":"Unconventional (anti)ferroelectricity in van der Waals group-IV monochalcogenides","authors":"Fengrui Sui, Yilun Yu, Ju Chen, Ruijuan Qi, Rui Ge, Yufan Zheng, Beituo Liu, Rong Jin, Shijing Gong, Fangyu Yue, Junhao Chu","doi":"10.1038/s41467-025-57138-5","DOIUrl":null,"url":null,"abstract":"<p>Fundamentally, ferroelectrics must belong to a noncentrosymmetric space group, limiting the exploration of more new ferroelectric materials. We circumvent this limitation by triggering structure distortion and inducing ferroelectricity in centrosymmetric van der Waals group-IV monochalcogenide GeSe semiconductor that features unexpected intrinsic out-of-plane antiferroelectricity. Double-type and single-type hysteresis loops from electric measurements, bonding distortion observed in in-situ atomic imaging, and perpendicular polarization uncovered by first-principles calculations, confirm the intrinsic out-of-plane antiferroelectricity and the antiferroelectric–ferroelectric transition induced by the vertical external electric-field. The hidden out-of-plane antiferroelectricity and field induced ferroelectric polarization in spatial-inversion symmetric GeSe makes it a new member of van der Waals layered semiconductors with both in-plane and out-of-plane ferroelectricity, and possibly, can be extended to all group-IV monochalcogenides and other centrosymmetric van der Waals layered materials.</p>","PeriodicalId":19066,"journal":{"name":"Nature Communications","volume":"14 1","pages":""},"PeriodicalIF":14.7000,"publicationDate":"2025-02-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Nature Communications","FirstCategoryId":"103","ListUrlMain":"https://doi.org/10.1038/s41467-025-57138-5","RegionNum":1,"RegionCategory":"综合性期刊","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"MULTIDISCIPLINARY SCIENCES","Score":null,"Total":0}
引用次数: 0
Abstract
Fundamentally, ferroelectrics must belong to a noncentrosymmetric space group, limiting the exploration of more new ferroelectric materials. We circumvent this limitation by triggering structure distortion and inducing ferroelectricity in centrosymmetric van der Waals group-IV monochalcogenide GeSe semiconductor that features unexpected intrinsic out-of-plane antiferroelectricity. Double-type and single-type hysteresis loops from electric measurements, bonding distortion observed in in-situ atomic imaging, and perpendicular polarization uncovered by first-principles calculations, confirm the intrinsic out-of-plane antiferroelectricity and the antiferroelectric–ferroelectric transition induced by the vertical external electric-field. The hidden out-of-plane antiferroelectricity and field induced ferroelectric polarization in spatial-inversion symmetric GeSe makes it a new member of van der Waals layered semiconductors with both in-plane and out-of-plane ferroelectricity, and possibly, can be extended to all group-IV monochalcogenides and other centrosymmetric van der Waals layered materials.
期刊介绍:
Nature Communications, an open-access journal, publishes high-quality research spanning all areas of the natural sciences. Papers featured in the journal showcase significant advances relevant to specialists in each respective field. With a 2-year impact factor of 16.6 (2022) and a median time of 8 days from submission to the first editorial decision, Nature Communications is committed to rapid dissemination of research findings. As a multidisciplinary journal, it welcomes contributions from biological, health, physical, chemical, Earth, social, mathematical, applied, and engineering sciences, aiming to highlight important breakthroughs within each domain.