Unveiling surface reactivity: the crucial role of auxiliary ligands in Gallium amidinate-based precursors for Atomic Layer Deposition

IF 3.5 3区化学 Q2 CHEMISTRY, INORGANIC & NUCLEAR

Dalton Transactions Pub Date : 2025-02-21 DOI:10.1039/d4dt03498h

Eva Pugliese, Damien Coutancier, Paul-Alexis PAVARD, Julien Hervochon, Bram van der Linden, Nicolas Casaretto, Sophie Bourcier, Geoffrey Pourtois, Murielle Bouttemy, Audrey Auffrant, Nathanaelle Schneider

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引用次数: 0

Abstract

Two novel gallium precursors for Atomic Layer Deposition (ALD), LGaMe₂ and LGa(NMe₂)₂ with L = N,N’-di-tertbutylacetamidinato, were successfully synthesised from a carbodiimide and gallium trichloride. The compounds were characterised by NMR spectroscopy and HR-mass spectrometry, confirming their monomeric nature. Their surface reactivity under ALD conditions with H₂O and H₂S co-reactants was explored using in-situ quartz crystal microbalance (QCM) measurements. LGaMe₂, bearing methyl ligands, was found to inhibit film growth, with deposition halting after three cycles. In contrast, LGa(NMe₂)₂ facilitated the successful growth of films using both H₂O and H₂S leading to Ga2O3 and Ga2S3 respectively, as confirmed by additional thin film ex-situ characterisation.This study underscores the critical role of auxiliary X ligands (here Me or NMe₂) in determining ALD process efficiency, and emphasises the complexity and unique nature of surface chemistry compared to solution-phase behaviour.

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来源期刊

Dalton Transactions 化学-无机化学与核化学

CiteScore

6.60

自引率

7.50%

发文量

1832

审稿时长

1.5 months

期刊介绍： Dalton Transactions is a journal for all areas of inorganic chemistry, which encompasses the organometallic, bioinorganic and materials chemistry of the elements, with applications including synthesis, catalysis, energy conversion/storage, electrical devices and medicine. Dalton Transactions welcomes high-quality, original submissions in all of these areas and more, where the advancement of knowledge in inorganic chemistry is significant.