Molecular Design in Area-Selective Atomic Layer Deposition: Understanding Inhibitors and Precursors

Abstract

Area-selective atomic layer deposition (AS-ALD) has become an essential technique in precision patterning due to its ability to deposit thin films with high conformality and angstrom-level thickness control exclusively in targeted areas. This bottom-up approach offers significant advantages over conventional top-down patterning methods such as photolithography, which encounter challenges like edge placement error and require multiple processing steps. AS-ALD, with its precise control over nanostructure fabrication, supports the development of advanced devices and extends its applications to diverse fields such as sensing, catalysis, and energy. This Review considers molecular design in AS-ALD, highlighting the molecular-level interactions between atomic layer deposition (ALD) precursors and inhibitors with a focus on how variations in precursor ligands and inhibitor head and tail groups influence selectivity. Recent advancements and experimental insights are summarized to provide an understanding of the chemical mechanisms underlying AS-ALD processes. By offering detailed molecular insights, this Review aims to enhance the selection and design of precursor and inhibitor molecules, thereby advancing the development of AS-ALD across various technological fields.