Study on thermal quenching mechanism and recombination dynamics of Si-bound exciton transition in AlN

IF 3.6 2区物理与天体物理 Q2 PHYSICS, APPLIED

Applied Physics Letters Pub Date : 2025-02-20 DOI:10.1063/5.0253813

Guoping Li, Ning Tang, Chen Ji, Qikun Wang, Liang Wu, Lei Fu, Shixiong Zhang, Shuaiyu Chen, Erfei Zhang, Tianyu Zhang, Fujun Xu, Weikun Ge, Bo Shen

{"title":"Study on thermal quenching mechanism and recombination dynamics of Si-bound exciton transition in AlN","authors":"Guoping Li, Ning Tang, Chen Ji, Qikun Wang, Liang Wu, Lei Fu, Shixiong Zhang, Shuaiyu Chen, Erfei Zhang, Tianyu Zhang, Fujun Xu, Weikun Ge, Bo Shen","doi":"10.1063/5.0253813","DOIUrl":null,"url":null,"abstract":"Steady-state photoluminescence (PL) and time-resolved photoluminescence spectroscopy are employed to study near-band edge excitonic emission lines in an aluminum nitride (AlN) film over a range of temperatures. The thermal quenching of the neutral silicon-bound exciton (Si0X) emission peak in AlN is observed, which is caused by the thermally activated processes from Si0X to two types of free exciton (Γ1 and Γ5), along with a two-electron satellite (TES) transition as a competing pathway. Among these, the activation process to the higher-energy Γ1 free exciton state is predominant, which may be related to the symmetry of the exciton states. The non-monotonic temperature dependence of the TES emission intensity is observed, which originates from the predominance of the thermally activated TES transition rate at low temperatures, as opposed to the delocalization tendency of Si0X. Due to the rapid reduction in the nonradiative recombination lifetime, the PL lifetime of the Si0X emission peak decreases from 160 ps at 4.5 K to 15 ps at 80 K. Meantime, the radiative recombination lifetime increases with temperature, which further accelerates the thermal quenching of the Si0X emission peak to some extent.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"15 1","pages":""},"PeriodicalIF":3.6000,"publicationDate":"2025-02-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Applied Physics Letters","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.1063/5.0253813","RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"PHYSICS, APPLIED","Score":null,"Total":0}

引用次数: 0

Abstract

Steady-state photoluminescence (PL) and time-resolved photoluminescence spectroscopy are employed to study near-band edge excitonic emission lines in an aluminum nitride (AlN) film over a range of temperatures. The thermal quenching of the neutral silicon-bound exciton (Si0X) emission peak in AlN is observed, which is caused by the thermally activated processes from Si0X to two types of free exciton (Γ1 and Γ5), along with a two-electron satellite (TES) transition as a competing pathway. Among these, the activation process to the higher-energy Γ1 free exciton state is predominant, which may be related to the symmetry of the exciton states. The non-monotonic temperature dependence of the TES emission intensity is observed, which originates from the predominance of the thermally activated TES transition rate at low temperatures, as opposed to the delocalization tendency of Si0X. Due to the rapid reduction in the nonradiative recombination lifetime, the PL lifetime of the Si0X emission peak decreases from 160 ps at 4.5 K to 15 ps at 80 K. Meantime, the radiative recombination lifetime increases with temperature, which further accelerates the thermal quenching of the Si0X emission peak to some extent.

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AlN中si束缚激子跃迁的热猝灭机制及复合动力学研究

采用稳态光致发光（PL）和时间分辨光致发光光谱技术研究了氮化铝（AlN）薄膜在一定温度范围内的近带边缘激子发射谱线。观察到AlN中中性硅束缚激子（Si0X）发射峰的热猝灭，这是由Si0X到两种自由激子（Γ1和Γ5）的热激活过程以及作为竞争途径的双电子卫星（TES）跃迁引起的。其中，对高能Γ1自由激子态的激活过程占主导地位，这可能与激子态的对称性有关。观察到TES发射强度的非单调温度依赖性，这源于低温下热激活的TES跃迁率占主导地位，而不是Si0X的离域倾向。由于非辐射复合寿命的快速降低，Si0X发射峰的PL寿命从4.5 K时的160 ps降低到80 K时的15 ps。同时，辐射复合寿命随温度的升高而增大，在一定程度上进一步加速了Si0X发射峰的热猝灭。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Applied Physics Letters 物理-物理：应用

CiteScore

6.40

自引率

10.00%

发文量

1821

审稿时长

1.6 months

期刊介绍： Applied Physics Letters (APL) features concise, up-to-date reports on significant new findings in applied physics. Emphasizing rapid dissemination of key data and new physical insights, APL offers prompt publication of new experimental and theoretical papers reporting applications of physics phenomena to all branches of science, engineering, and modern technology. In addition to regular articles, the journal also publishes invited Fast Track, Perspectives, and in-depth Editorials which report on cutting-edge areas in applied physics. APL Perspectives are forward-looking invited letters which highlight recent developments or discoveries. Emphasis is placed on very recent developments, potentially disruptive technologies, open questions and possible solutions. They also include a mini-roadmap detailing where the community should direct efforts in order for the phenomena to be viable for application and the challenges associated with meeting that performance threshold. Perspectives are characterized by personal viewpoints and opinions of recognized experts in the field. Fast Track articles are invited original research articles that report results that are particularly novel and important or provide a significant advancement in an emerging field. Because of the urgency and scientific importance of the work, the peer review process is accelerated. If, during the review process, it becomes apparent that the paper does not meet the Fast Track criterion, it is returned to a normal track.