T. Sabardeil , G. Gregoire , J.-L. Reverchon , V. Trinite , E. Tournié , J.-B. Rodriguez , A. Evirgen
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引用次数: 0
Abstract
We present a detailed study of the crystalline, morphological, electrical and optical properties of GaInAsSb quaternary alloys grown by Molecular Beam Epitaxy (MBE) on GaSb substrate. The objective of this study is, on the one hand, to use the far-from- thermodynamic equilibrium specificity of MBE to grow compositions deep inside the miscibility gap, and to identify the range of compositions accessible for high-performance infrared devices. On the other hand, it enriches the knowledge on the InAs-rich GaInAsSb quaternary alloy that has been little studied until now.
期刊介绍:
The journal offers a common reference and publication source for workers engaged in research on the experimental and theoretical aspects of crystal growth and its applications, e.g. in devices. Experimental and theoretical contributions are published in the following fields: theory of nucleation and growth, molecular kinetics and transport phenomena, crystallization in viscous media such as polymers and glasses; crystal growth of metals, minerals, semiconductors, superconductors, magnetics, inorganic, organic and biological substances in bulk or as thin films; molecular beam epitaxy, chemical vapor deposition, growth of III-V and II-VI and other semiconductors; characterization of single crystals by physical and chemical methods; apparatus, instrumentation and techniques for crystal growth, and purification methods; multilayer heterostructures and their characterisation with an emphasis on crystal growth and epitaxial aspects of electronic materials. A special feature of the journal is the periodic inclusion of proceedings of symposia and conferences on relevant aspects of crystal growth.