Multi-edge vertically aligned MoS2 as a SERS-enhanced substrate

Abstract

The controlled synthesis of high-quality and sensitive substrates is critical for promoting surface-enhanced Raman scattering (SERS) detection technology. As a member of transition metal dichalcogenides (TMDCs), MoS₂ possesses an unique electronic state and energy band structure, making it a promising candidate for potential SERS substrates based on chemical enhancement mechanisms. However, its application in SERS applications remains limited by a rich fluorescence background and a low density of states (DOS) near the Fermi energy level. Thus, optimizing the MoS₂ structure to improve SERS performance is critical. In this study, MoS₂ nanobelts were synthesized by chemical vapor deposition (CVD) with hydrothermal MoO₃ as the precursors. The resulting morphology of these strips was characterized by vertically aligned edges. The designed structure showed excellent SERS signal with a detection limit of 10⁻⁷ M and enhancement factor (EF) of 1.1 × 10⁴ when probing with R6G, thus providing a low-cost and high-performance substrate material for SERS applications.