Capacitance effects of nanopore chips on ionic current modulation and noise characteristics.

IF 2.9 4区 材料科学 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY
Kabin Lin, Chen Chen, Dongxuan Li, Haoyong Li, Jinzhu Zhou
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引用次数: 0

Abstract

Solid-state nanopores exhibit adjustable pore size, robust chemical and thermal stability, and compatibility with semiconductor fabrication, positioning them as versatile platforms for nanofluidic applications and single-molecule detection. However, their higher noise levels compared to biological nanopores hinder their sensitivity in detecting biomolecules such as DNA and proteins. Enhancing detection sensitivity requires an in-depth understanding of noise sources and strategies for noise reduction. Here, we construct an equivalent circuit model of solid-state nanopores and conduct corresponding experiments to evaluate how chip capacitance, salt concentration, applied voltage, and pore size influence ionic current noise. We find that chip capacitance is the dominant factor affecting ionic current noise, with minimal noise sensitivity to salt concentration below 0.1 M but pronounced increases above this threshold. The pH has little impact on noise, whereas higher applied voltages elevate noise at high salt concentrations. Introducing a SiO2layer between SiNxand Si significantly reduces chip capacitance; a 1000 nm SiO2layer reduces capacitance to 7.9 pF, decreasing ionic current noise to 18.7 pA for a 2.2 nm nanopore in 1 M KCl at 40μm membrane side length and 100 mV and 10 kHz sampling. This reduction in capacitance improves response time and measurement accuracy, marking a critical advancement for high-sensitivity applications of solid-state nanopores.

纳米孔芯片对离子电流调制和噪声特性的电容效应。
固态纳米孔具有可调节的孔径,强大的化学和热稳定性,以及与半导体制造的兼容性,使其成为纳米流体应用和单分子检测的通用平台。然而,与生物纳米孔相比,它们的高噪声水平阻碍了它们检测生物分子(如DNA和蛋白质)的灵敏度。提高探测灵敏度需要对噪声源和降噪策略有深入的了解。本文构建了固态纳米孔的等效电路模型,并进行了相应的实验,以评估芯片电容、盐浓度、外加电压和孔径对离子电流噪声的影响。我们发现,芯片电容是影响离子电流噪声的主要因素,当盐浓度低于0.1 M时,芯片电容对离子电流噪声的敏感性最小,但当盐浓度高于0.1 M时,芯片电容对离子电流噪声的敏感性显著增加。pH值对噪声影响不大,而在高盐浓度下,较高的施加电压会提高噪声。在SiNxand Si之间引入sio2层可以显著降低芯片电容;在1 M KCl中,在40 μm膜边长,100 mV和10 kHz采样条件下,2.2 nm纳米孔的sio2层可将电容降低到7.9 pF,将离子电流噪声降低到18.7 pA。这种电容的减小提高了响应时间和测量精度,标志着固态纳米孔高灵敏度应用的关键进步。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
Nanotechnology
Nanotechnology 工程技术-材料科学:综合
CiteScore
7.10
自引率
5.70%
发文量
820
审稿时长
2.5 months
期刊介绍: The journal aims to publish papers at the forefront of nanoscale science and technology and especially those of an interdisciplinary nature. Here, nanotechnology is taken to include the ability to individually address, control, and modify structures, materials and devices with nanometre precision, and the synthesis of such structures into systems of micro- and macroscopic dimensions such as MEMS based devices. It encompasses the understanding of the fundamental physics, chemistry, biology and technology of nanometre-scale objects and how such objects can be used in the areas of computation, sensors, nanostructured materials and nano-biotechnology.
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