High-Performance Gate-All-Around Field Effect Transistors Based on Orderly Arrays of Catalytic Si Nanowire Channels

IF 26.6 1区材料科学 Q1 Engineering

Nano-Micro Letters Pub Date : 2025-02-19 DOI:10.1007/s40820-025-01674-8

Wei Liao, Wentao Qian, Junyang An, Lei Liang, Zhiyan Hu, Junzhuan Wang, Linwei Yu

{"title":"High-Performance Gate-All-Around Field Effect Transistors Based on Orderly Arrays of Catalytic Si Nanowire Channels","authors":"Wei Liao, Wentao Qian, Junyang An, Lei Liang, Zhiyan Hu, Junzhuan Wang, Linwei Yu","doi":"10.1007/s40820-025-01674-8","DOIUrl":null,"url":null,"abstract":"<div><h2>Highlights</h2><div>\n \n \n<ul>\n <li>\n <p>A high-density array of orderly silicon nanowires (SiNWs) was grown in precise locations, with diameter of <i>D</i><sub>NW</sub> = 22.4 ± 2.4 nm and interwire spacing of 90 nm.</p>\n </li>\n <li>\n <p>A special suspension-contact protocol has been developed to reliably suspend the in-plane solid-liquid-solid SiNWs to serve as ultrathin quasi-1D channels for gate-all-around field-effect transistors (GAA-FETs).</p>\n </li>\n <li>\n <p>By optimizing the source/drain metal contacts, high-performance catalytical GAA-FETs have been successfully demonstrated, achieving a high on/off current ratio of 10<sup>7</sup> and a steep subthreshold swing of 66 mV dec<sup>-1</sup>.</p>\n </li>\n </ul>\n </div></div>","PeriodicalId":714,"journal":{"name":"Nano-Micro Letters","volume":"17 1","pages":""},"PeriodicalIF":26.6000,"publicationDate":"2025-02-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://link.springer.com/content/pdf/10.1007/s40820-025-01674-8.pdf","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Nano-Micro Letters","FirstCategoryId":"88","ListUrlMain":"https://link.springer.com/article/10.1007/s40820-025-01674-8","RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"Engineering","Score":null,"Total":0}

引用次数: 0

Abstract

Highlights

A high-density array of orderly silicon nanowires (SiNWs) was grown in precise locations, with diameter of D_NW = 22.4 ± 2.4 nm and interwire spacing of 90 nm.
A special suspension-contact protocol has been developed to reliably suspend the in-plane solid-liquid-solid SiNWs to serve as ultrathin quasi-1D channels for gate-all-around field-effect transistors (GAA-FETs).
By optimizing the source/drain metal contacts, high-performance catalytical GAA-FETs have been successfully demonstrated, achieving a high on/off current ratio of 10⁷ and a steep subthreshold swing of 66 mV dec^-1.

查看原文本刊更多论文

求助全文

约1分钟内获得全文求助全文

来源期刊

Nano-Micro Letters NANOSCIENCE & NANOTECHNOLOGY-MATERIALS SCIENCE, MULTIDISCIPLINARY

CiteScore

32.60

自引率

4.90%

发文量

981

审稿时长

1.1 months

期刊介绍： Nano-Micro Letters is a peer-reviewed, international, interdisciplinary, and open-access journal published under the SpringerOpen brand. Nano-Micro Letters focuses on the science, experiments, engineering, technologies, and applications of nano- or microscale structures and systems in various fields such as physics, chemistry, biology, material science, and pharmacy.It also explores the expanding interfaces between these fields. Nano-Micro Letters particularly emphasizes the bottom-up approach in the length scale from nano to micro. This approach is crucial for achieving industrial applications in nanotechnology, as it involves the assembly, modification, and control of nanostructures on a microscale.