Electric properties of PIN-PMN-PT ceramics with BaTiO3 additive

IF 2.8 4区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Journal of Materials Science: Materials in Electronics Pub Date : 2025-02-18 DOI:10.1007/s10854-025-14430-w

Weihong Yang, Kailai Lu, Ran Zhuo, Jie Wu

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引用次数: 0

Abstract

30Pb(In_1/2Nb_1/2)O₃-38Pb(Mg_1/3Nb_2/3)O₃-32PbTiO₃ ceramics with BaTiO₃ additive were prepared by the conventional two-step solid state sintering method. The effects of BaTiO₃ additive on phase structure, microstructure and electric properties of PIN-PMN-PT ceramics were investigated. The incorporation of BaTiO₃ into the PIN-PMN-PT solid solutions leads to a crystallographic transformation from rhombohedral to tetragonal. With the increasing of BaTiO₃ contents, rhombohedral-tetragonal phase transition temperature T_rt and Curie temperature T_c decrease slightly and dielectric constant increase. The piezoelectric coefficient d₃₃, electromechanical coupling factor k_p and electric field induced strain S were improved by BaTiO₃ incorporation, reaching maximum of 342 pC/N, 0.45 and 0.142% at 3 mol%, respectively.

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来源期刊

Journal of Materials Science: Materials in Electronics 工程技术-材料科学：综合

CiteScore

5.00

自引率

7.10%

发文量

1931

审稿时长

2 months

期刊介绍： The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.