Highly doped and optimized 5-nm GAA CNTFET with different perspectives

IF 2.2 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Journal of Computational Electronics Pub Date : 2025-02-17 DOI:10.1007/s10825-025-02288-4

Mahmood Rafiee, Nabiollah Shiri, Ayoub Sadeghi

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引用次数: 0

Abstract

The invention of new transistors and their channel length reduction are challenging processes. The carbon nanotube field-effect transistor (CNTFET), especially the gate-all-around (GAA) type, is an encouraging technology to solve the short channel effect. In this paper, changing doping concentration and finding the best coordination for contacts and spacer are promising approaches that are discussed. A highly doped 5 nm GAA CNTFET is presented and its functionality is evaluated in the device, layout, and circuit states. By the Monte Carlo method, the best structure coordination of drain and source contacts, spacer, width, and height are extracted. The device is evaluated for different supply voltages and the best voltage for its operation is 0.5 V. The concentration of dopants for n-type devices is found to be N_D0 = 1 × 10²¹ cm⁻³ and N_A = 1 × 10¹⁸ cm⁻³ for the donor and acceptor, respectively, and for the p-type, N_A and N_D0 are replaced. Also, the I_on/I_OFF ratio of n-type and p-type are 2.3 × 10⁴ and 1.6 × 10⁴, respectively, which are achieved by double optimization. The optimized devices are implemented in an inverter. The resulting noise margin of the inverter demonstrates its high accuracy. The customized device is a qualified candidate for sophisticated structures.

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不同角度的高掺杂优化5nm GAA CNTFET

新型晶体管的发明及其沟道长度的减小是一个具有挑战性的过程。碳纳米管场效应晶体管（CNTFET），特别是栅极全能（GAA）型，是解决短沟道效应的一种令人鼓舞的技术。本文讨论了改变掺杂浓度和寻找触点与间隔剂的最佳配位是有前途的方法。提出了一种高掺杂的5nm GAA CNTFET，并在器件、布局和电路状态下评估了其功能。通过蒙特卡罗方法，提取漏源触点、间隔、宽度和高度的最佳结构配合。该装置在不同的电源电压下进行了评估，其工作的最佳电压为0.5 V。n型器件的掺杂剂浓度分别为ND0 = 1 × 1021 cm−3和NA = 1 × 1018 cm−3，而p型器件的掺杂剂浓度则由NA和ND0代替。通过双优化，n型和p型离子/IOFF比分别为2.3 × 104和1.6 × 104。优化后的器件在逆变器中实现。结果表明，逆变器的噪声裕度较高。定制的装置是复杂结构的合格候选者。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Journal of Computational Electronics ENGINEERING, ELECTRICAL & ELECTRONIC-PHYSICS, APPLIED

CiteScore

4.50

自引率

4.80%

发文量

142

审稿时长

>12 weeks

期刊介绍： he Journal of Computational Electronics brings together research on all aspects of modeling and simulation of modern electronics. This includes optical, electronic, mechanical, and quantum mechanical aspects, as well as research on the underlying mathematical algorithms and computational details. The related areas of energy conversion/storage and of molecular and biological systems, in which the thrust is on the charge transport, electronic, mechanical, and optical properties, are also covered. In particular, we encourage manuscripts dealing with device simulation; with optical and optoelectronic systems and photonics; with energy storage (e.g. batteries, fuel cells) and harvesting (e.g. photovoltaic), with simulation of circuits, VLSI layout, logic and architecture (based on, for example, CMOS devices, quantum-cellular automata, QBITs, or single-electron transistors); with electromagnetic simulations (such as microwave electronics and components); or with molecular and biological systems. However, in all these cases, the submitted manuscripts should explicitly address the electronic properties of the relevant systems, materials, or devices and/or present novel contributions to the physical models, computational strategies, or numerical algorithms.