Method for Sensitivity Improvement of MEMS Pressure Sensor: Structural Design and Optimization of Concave Resonant Pressure Sensor

IF 4.3 2区综合性期刊 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Sensors Journal Pub Date : 2025-01-13 DOI:10.1109/JSEN.2025.3526621

Senhui Chuai;Jieyao Deng;Haoran Li;Kai Chen;Hang Geng;Yifan Wang;Huiliang Cao

{"title":"Method for Sensitivity Improvement of MEMS Pressure Sensor: Structural Design and Optimization of Concave Resonant Pressure Sensor","authors":"Senhui Chuai;Jieyao Deng;Haoran Li;Kai Chen;Hang Geng;Yifan Wang;Huiliang Cao","doi":"10.1109/JSEN.2025.3526621","DOIUrl":null,"url":null,"abstract":"A single silicon island concave silicon microresonant pressure sensor based on frequency difference is proposed in this article. The resonator is designed for electrostatic drive and electrostatic detection, and the lateral synovial motion is taken as the working mode so that the structure has the characteristics of structural stability and small coupling, and the force mode is torque transmission. The structure was simulated by a finite element analysis, and the structure size was determined. The working range of the overall structure was <inline-formula> <tex-math>$0\\sim 300$ </tex-math></inline-formula> kPa, and the simulation verified that the working mode order in the range did not change with the increase of pressure, ensuring the linearity of the output. The operating resonant frequencies of the resonator are 53324.15 and 54721.82 Hz. The effect of the small deflection deformation of the sensitive film and the inclination angle of the silicon island on the sensitivity of the resonator is analyzed by simulation, and the location of the silicon island is determined. The feasibility of resonator structure is confirmed by a frequency-domain response analysis, and the sensitivity of resonator can reach 50.48 Hz/kPa.","PeriodicalId":447,"journal":{"name":"IEEE Sensors Journal","volume":"25 4","pages":"6206-6217"},"PeriodicalIF":4.3000,"publicationDate":"2025-01-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Sensors Journal","FirstCategoryId":"103","ListUrlMain":"https://ieeexplore.ieee.org/document/10839247/","RegionNum":2,"RegionCategory":"综合性期刊","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}

引用次数: 0

Abstract

A single silicon island concave silicon microresonant pressure sensor based on frequency difference is proposed in this article. The resonator is designed for electrostatic drive and electrostatic detection, and the lateral synovial motion is taken as the working mode so that the structure has the characteristics of structural stability and small coupling, and the force mode is torque transmission. The structure was simulated by a finite element analysis, and the structure size was determined. The working range of the overall structure was

$0\sim 300$

kPa, and the simulation verified that the working mode order in the range did not change with the increase of pressure, ensuring the linearity of the output. The operating resonant frequencies of the resonator are 53324.15 and 54721.82 Hz. The effect of the small deflection deformation of the sensitive film and the inclination angle of the silicon island on the sensitivity of the resonator is analyzed by simulation, and the location of the silicon island is determined. The feasibility of resonator structure is confirmed by a frequency-domain response analysis, and the sensitivity of resonator can reach 50.48 Hz/kPa.

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来源期刊

IEEE Sensors Journal 工程技术-工程：电子与电气

CiteScore

7.70

自引率

14.00%

发文量

2058

审稿时长

5.2 months

期刊介绍： The fields of interest of the IEEE Sensors Journal are the theory, design , fabrication, manufacturing and applications of devices for sensing and transducing physical, chemical and biological phenomena, with emphasis on the electronics and physics aspect of sensors and integrated sensors-actuators. IEEE Sensors Journal deals with the following: -Sensor Phenomenology, Modelling, and Evaluation -Sensor Materials, Processing, and Fabrication -Chemical and Gas Sensors -Microfluidics and Biosensors -Optical Sensors -Physical Sensors: Temperature, Mechanical, Magnetic, and others -Acoustic and Ultrasonic Sensors -Sensor Packaging -Sensor Networks -Sensor Applications -Sensor Systems: Signals, Processing, and Interfaces -Actuators and Sensor Power Systems -Sensor Signal Processing for high precision and stability (amplification, filtering, linearization, modulation/demodulation) and under harsh conditions (EMC, radiation, humidity, temperature); energy consumption/harvesting -Sensor Data Processing (soft computing with sensor data, e.g., pattern recognition, machine learning, evolutionary computation; sensor data fusion, processing of wave e.g., electromagnetic and acoustic; and non-wave, e.g., chemical, gravity, particle, thermal, radiative and non-radiative sensor data, detection, estimation and classification based on sensor data) -Sensors in Industrial Practice