Ali Naderi , Sipan Liu , Jing Fu , Tianbing Xu , Shujun Zhang , Jong Eun Ryu , Xiaoning Jiang
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引用次数: 0
Abstract
This paper reviews the recent development of piezoelectric materials, structures, devices, and their applications in cryogenic environments (< 120 K). It is known that cryogenic environment presents challenges for piezoelectric materials since most of them lose majority of their piezoelectricity at low temperatures. Recently, it was found that some types of these materials, such as relaxor-PT single crystals, can still maintain reasonably high piezoelectric properties in cryogenic environments. In this review paper, the effect of cryogenic temperature on the piezoelectric materials is surveyed, and the methods to tailor the piezoelectric materials for proper functions at cryogenic temperatures (such as doping, changing the material composition, and engineering defects) are discussed and compared. The recent progress on piezoelectric structures for cryogenic space exploration as well as quantum and biomedical applications are then reviewed and discussed. Lastly, the challenges and future perspectives of piezoelectric materials and their associated applications are introduced.
期刊介绍:
Sensors and Actuators A: Physical brings together multidisciplinary interests in one journal entirely devoted to disseminating information on all aspects of research and development of solid-state devices for transducing physical signals. Sensors and Actuators A: Physical regularly publishes original papers, letters to the Editors and from time to time invited review articles within the following device areas:
• Fundamentals and Physics, such as: classification of effects, physical effects, measurement theory, modelling of sensors, measurement standards, measurement errors, units and constants, time and frequency measurement. Modeling papers should bring new modeling techniques to the field and be supported by experimental results.
• Materials and their Processing, such as: piezoelectric materials, polymers, metal oxides, III-V and II-VI semiconductors, thick and thin films, optical glass fibres, amorphous, polycrystalline and monocrystalline silicon.
• Optoelectronic sensors, such as: photovoltaic diodes, photoconductors, photodiodes, phototransistors, positron-sensitive photodetectors, optoisolators, photodiode arrays, charge-coupled devices, light-emitting diodes, injection lasers and liquid-crystal displays.
• Mechanical sensors, such as: metallic, thin-film and semiconductor strain gauges, diffused silicon pressure sensors, silicon accelerometers, solid-state displacement transducers, piezo junction devices, piezoelectric field-effect transducers (PiFETs), tunnel-diode strain sensors, surface acoustic wave devices, silicon micromechanical switches, solid-state flow meters and electronic flow controllers.
Etc...