Photoacoustic and upconversion signal variation in In2O3: Er3+/Yb3+ phosphor co-doped with Mg2+/Zn2+ ions under 980 nm excitation for multifunctional applications

IF 4.1 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Minarul I. Sarkar , Kumar Shwetabh , Mayanglambam Suheshkumar Singh , Kaushal Kumar
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引用次数: 0

Abstract

The Er3+/Yb3+ doped In2O3 phosphor samples were synthesized by combustion method and then prepared samples were annealed at 800–1400 °C for 2 h for improvement of crystal phase and photoluminescence (PL) properties. The maximum upconversion (UC) emission intensity is achieved for the material annealed at 1300 °C for 2 h. The phase was confirmed by X-ray diffraction (XRD) and surface morphological structures of the sample were measured by field emission scanning electron microscope (FE-SEM) & transmission electron microscopy (TEM). The dia-valent dopant ions Mg2+ and Zn2+ were added into the optimum sample for enhancement of UC emission intensity. Then, frequency photoacoustic (PA) and UC spectra were recorded varying pump power through 980 nm diode laser source. Then the effects of dia-valent ions on radiative (happen due to photon) and non-radiative (happen due to phonon) emission properties of phosphors were checked simultaneously. The maximum PA signal is obtained for the 938–974 nm wavelength range and it directs its precious prospective for photo-thermal therapy (PTT) application. Finally, the authors demonstrated promising applications of the phosphor in fingerprint detection and as security ink for anti-counterfeiting purposes.
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来源期刊
Sensors and Actuators A-physical
Sensors and Actuators A-physical 工程技术-工程:电子与电气
CiteScore
8.10
自引率
6.50%
发文量
630
审稿时长
49 days
期刊介绍: Sensors and Actuators A: Physical brings together multidisciplinary interests in one journal entirely devoted to disseminating information on all aspects of research and development of solid-state devices for transducing physical signals. Sensors and Actuators A: Physical regularly publishes original papers, letters to the Editors and from time to time invited review articles within the following device areas: • Fundamentals and Physics, such as: classification of effects, physical effects, measurement theory, modelling of sensors, measurement standards, measurement errors, units and constants, time and frequency measurement. Modeling papers should bring new modeling techniques to the field and be supported by experimental results. • Materials and their Processing, such as: piezoelectric materials, polymers, metal oxides, III-V and II-VI semiconductors, thick and thin films, optical glass fibres, amorphous, polycrystalline and monocrystalline silicon. • Optoelectronic sensors, such as: photovoltaic diodes, photoconductors, photodiodes, phototransistors, positron-sensitive photodetectors, optoisolators, photodiode arrays, charge-coupled devices, light-emitting diodes, injection lasers and liquid-crystal displays. • Mechanical sensors, such as: metallic, thin-film and semiconductor strain gauges, diffused silicon pressure sensors, silicon accelerometers, solid-state displacement transducers, piezo junction devices, piezoelectric field-effect transducers (PiFETs), tunnel-diode strain sensors, surface acoustic wave devices, silicon micromechanical switches, solid-state flow meters and electronic flow controllers. Etc...
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