Effects of CaZrO3 doping on the oxygen vacancy formation and dielectric properties of BaTiO3 ceramics sintered in a reducing atmosphere

IF 2.8 4区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Journal of Materials Science: Materials in Electronics Pub Date : 2025-02-16 DOI:10.1007/s10854-025-14392-z

Hsuan-Jung Hsu, Kai Hsun Yang, Hsing-I Hsiang

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引用次数: 0

Abstract

This study investigates the role of CaZrO₃ doping in suppressing oxygen vacancies and enhancing the dielectric properties of BaTiO₃ ceramics sintered in reducing atmospheres, a critical challenge for base-metal electrode multilayer ceramic capacitors (BME-MLCCs). Advanced characterization techniques, including X-ray photoelectron spectroscopy (XPS) and impedance spectroscopy, reveal that CaZrO₃ doping significantly reduces oxygen vacancy concentrations and Ti³⁺ formation, mitigating defect-induced leakage currents. The optimized doping level (4-mol% CaZrO₃) promotes the formation of a core–shell microstructure, stabilizing the dielectric properties while achieving a high insulation resistivity and maintaining a dielectric constant of ~ 1900. These findings demonstrate that CaZrO₃ not only shifts the Curie temperature but also enhances long-term reliability and operational stability under reducing conditions. This study addresses critical gaps in existing research by providing a comprehensive understanding of defect suppression mechanisms and offering practical solutions for advancing high-reliability BME-MLCCs.

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来源期刊

Journal of Materials Science: Materials in Electronics 工程技术-材料科学：综合

CiteScore

5.00

自引率

7.10%

发文量

1931

审稿时长

2 months

期刊介绍： The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.