{"title":"Design, simulation and comparative analysis of a novel NCFET based astable multivibrator and a current starved astable multivibrator","authors":"Mohd Yasir, Naushad Alam","doi":"10.1007/s10470-025-02347-7","DOIUrl":null,"url":null,"abstract":"<div><p>In this work, design, simulation and comparative analysis of a novel Negative Capacitance FET (NCFET), Carbon Nanotube FET (CNTFET), FinFET and CMOS based astable multivibrator (AMV) and a current starved astable multivibrator (CSAMV) have been done. A performance comparison of the proposed circuits is made using variations in resistance, capacitance, temperature, and supply voltage (<span>\\( V_{DD} \\)</span>) using HSPICE simulations. Most of the performance parameters are improved in the case of NCFET based CSAMV. An increase of 1.03% in the amplitude of output square wave in CNTFET-AMV when compared with FinFET-AMV was observed. A significant increase in the maximum frequency was achieved by 216% in NCFET-CSAMV compared with FinFET-AMV. The maximum frequency achieved is 220 MHz in the case of NCFET-CSAMV. It was also observed that NCFET-AMV Starts to function appropriately at 0.08 V compared to FinFET-AMV, which starts to function appropriately at 0.39 V. The average power dissipation was 2.41 times higher in FinFET-CSAMV than in NCFET-CSAMV. The average power consumed is a little higher in the case of NCFET-CSAMV than CMOS-AMV. Still, it can be overcome if the circuit is operated at a lower <span>\\( V_{DD} \\)</span>.</p></div>","PeriodicalId":7827,"journal":{"name":"Analog Integrated Circuits and Signal Processing","volume":"122 3","pages":""},"PeriodicalIF":1.2000,"publicationDate":"2025-02-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Analog Integrated Circuits and Signal Processing","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s10470-025-02347-7","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"COMPUTER SCIENCE, HARDWARE & ARCHITECTURE","Score":null,"Total":0}
引用次数: 0
Abstract
In this work, design, simulation and comparative analysis of a novel Negative Capacitance FET (NCFET), Carbon Nanotube FET (CNTFET), FinFET and CMOS based astable multivibrator (AMV) and a current starved astable multivibrator (CSAMV) have been done. A performance comparison of the proposed circuits is made using variations in resistance, capacitance, temperature, and supply voltage (\( V_{DD} \)) using HSPICE simulations. Most of the performance parameters are improved in the case of NCFET based CSAMV. An increase of 1.03% in the amplitude of output square wave in CNTFET-AMV when compared with FinFET-AMV was observed. A significant increase in the maximum frequency was achieved by 216% in NCFET-CSAMV compared with FinFET-AMV. The maximum frequency achieved is 220 MHz in the case of NCFET-CSAMV. It was also observed that NCFET-AMV Starts to function appropriately at 0.08 V compared to FinFET-AMV, which starts to function appropriately at 0.39 V. The average power dissipation was 2.41 times higher in FinFET-CSAMV than in NCFET-CSAMV. The average power consumed is a little higher in the case of NCFET-CSAMV than CMOS-AMV. Still, it can be overcome if the circuit is operated at a lower \( V_{DD} \).
期刊介绍:
Analog Integrated Circuits and Signal Processing is an archival peer reviewed journal dedicated to the design and application of analog, radio frequency (RF), and mixed signal integrated circuits (ICs) as well as signal processing circuits and systems. It features both new research results and tutorial views and reflects the large volume of cutting-edge research activity in the worldwide field today.
A partial list of topics includes analog and mixed signal interface circuits and systems; analog and RFIC design; data converters; active-RC, switched-capacitor, and continuous-time integrated filters; mixed analog/digital VLSI systems; wireless radio transceivers; clock and data recovery circuits; and high speed optoelectronic circuits and systems.